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PDF ( 数据手册 , 数据表 ) MSA1022-CT1

零件编号 MSA1022-CT1
描述 PNP RF Amplifier Transistor Surface Mount
制造商 Motorola Semiconductors
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MSA1022-CT1 数据手册, 描述, 功能
MOTOROLA
www.DSatEaSMhIeCetO4UN.cDoUmCTOR TECHNICAL DATA
Order this document
by MSA1022–CT1/D
PNP RF Amplifier Transistor
Surface Mount
COLLECTOR
3
MSA1022-CT1
Motorola Preferred Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector–Base Voltage
VCBO
Collector–Emitter Voltage
VCEO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
Collector–Emitter Breakdown Voltage
(VCE = – 20 Vdc, IB = 0)
Emitter–Base Breakdown Voltage
(VEB = – 5.0 Vdc, IC = 0)
DC Current Gain(1)
(VCE = –10 Vdc, IC = –1.0 mAdc)
Current–Gain — Bandwidth Product
(VCB = –10 Vdc, IE = 1.0 mAdc)
1. Pulse Test: Pulse Width 300 µs, D.C. 2%.
DEVICE MARKING
2
BASE
1
EMITTER
Value
– 30
– 20
– 5.0
– 30
Unit
Vdc
Vdc
Vdc
mAdc
Max
200
150
– 55 ~ +150
Unit
mW
°C
°C
Symbol
ICBO
ICEO
IEBO
hFE
fT
2
1
3
CASE 318D–03, STYLE 1
SC–59
Min Max Unit
– 0.1
µAdc
–100
µAdc
— –10 µAdc
110 220 —
150 — MHz
Marking Symbol
ECX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MSA1022–BT1/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
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