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PDF ( 数据手册 , 数据表 ) DC9013

零件编号 DC9013
描述 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
制造商 Dc Components
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DC9013 数据手册, 描述, 功能
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DC9013
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating
40
20
5
500
100
625
+150
-55 to +150
Unit
V
V
V
mA
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 40
Collector-Emitter Breakdown Voltage BVCEO 20
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
Base-Emitter On Voltage
VBE(on)
-
DC Current Gain(1)
hFE1
hFE2
64
40
Transition Frequency
fT 100
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
--
--
--
- 100
- 100
- 0.6
- 1.2
- 0.9
120 300
--
--
-8
Classification of hFE1
Rank
D
E
F
G
H
Range
64~91
78~112
96~135 112~166 144~202
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=10mA, VCE=1V
IC=50mA, VCE=1V
IC=500mA, VCE=1V
IC=10mA, VCE=1V, f=100MHz
VCB=10V, f=1MHz
I
176~300
I1
176~246
I2
214~300












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