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PDF ( 数据手册 , 数据表 ) RD05MMP1

零件编号 RD05MMP1
描述 RoHS Compliance
制造商 Mitsubishi Electric
LOGO Mitsubishi Electric LOGO 


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RD05MMP1 数据手册, 描述, 功能
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
OUTLINE DRAWING
8.0+/-0.2
(d)
0.2+/-0.05
(b)
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
BOTTOM VIEW
APPLICATION
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
941MHz band mobile radio sets.
SIDE VIEW
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
(c)
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
VGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
Pin Input Power
ID Drain Current
Zg=Zl=50
-
Tch Junction Temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
0.5 - 2.5
Pout Output power
f=941MHz , VDD=7.2V
5.5 6
-
ηD Drain efficiency
Pin=0.7W,Idq=1.0A
43 -
-
VDD=9.5V,Po=5.5W(Pin Control)
VSWRT Load VSWR tolerance
f=941MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD05MMP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006












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