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PDF ( 数据手册 , 数据表 ) MW7IC18100NR1

零件编号 MW7IC18100NR1
描述 RF LDMOS Wideband Integrated Power Amplifiers
制造商 Freescale Semiconductor
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MW7IC18100NR1 数据手册, 描述, 功能
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
www.DataSheet4U.com
The MW7IC18100N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 2050 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations including GSM EDGE and CDMA.
Final Application
Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,
PoPuto=we1r00GaWinat—ts
CW, 1805 - 1880
30 dB
MHz
or
1930 - 1990
MHz
Power Added Efficiency — 48%
GSM EDGE Application
Typical GSM
800 mA, Pout
E=D4G0EWPaettrsfoArvmga.,n1ce8:0V5 D- 1D8=8028MVHozltosr,
I1D9Q310=- 1291950mMAH,zIDQ2
=
Power Gain — 31 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 80 dBc
EVM — 1.5% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 120 W CW
Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW7IC18100N
Rev. 1, 6/2007
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
1990 MHz, 100 W, 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 01
TO - 270 WB - 14
PLASTIC
MW7IC18100NR1
CASE 1621 - 01
TO - 270 WB - 14 GULL
PLASTIC
MW7IC18100GNR1
CASE 1617 - 01
TO - 272 WB - 14
PLASTIC
MW7IC18100NBR1
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
NC
NC
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
1







MW7IC18100NR1 pdf, 数据表
TYPICAL CHARACTERISTICS — 1900 MHz
31
IDQ1 = 180 mA
IDQ2 = 1000 mA
f = 1960 MHz
30
29
28
28 V
VDD = 24 V
32 V
27
0 50 100 150 200
Pout, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain versus Output Power
5
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
4 EDGE Modulation
3
2 Pout = 50 W Avg.
1
30 W Avg. 40 W Avg.
0
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 16. EVM versus Frequency
− 55
SR @ 400 kHz
− 60
Pout = 50 W Avg.
40 W Avg.
−65 30 W Avg.
− 70
VDD1 = 28 Vdc, VDD2 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 815 mA
f = 1960 MHz, EDGE Modulation
− 75
SR @ 600 kHz
− 80
50 W Avg.
30 W Avg.
40 W Avg.
− 85
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 17. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 40
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
f = 1960 MHz, EDGE Modulation
− 50
− 60
25_C
TC = −30_C
85_C
− 70
− 80
1 10 100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Spectral Regrowth at 400 kHz
versus Output Power
− 50
VDD1 = 28 Vdc
IDQ1 = 215 mA, IDQ2 = 800 mA
f = 1960 MHz, EDGE Modulation
− 60
− 70
TC = 85_C 25_C
− 30_C
− 80
− 90
1 10 100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. Spectral Regrowth at 600 kHz
versus Output Power
16
14
VDD1 = 28 Vdc
IDQ1 = 215 mA
12 IDQ2 = 800 mA
f = 1960 MHz
10 EDGE Modulation
8
6
4
PAE
80
TC = 85_C
− 30_C
70
25_C
60
50
85_C 40
25_C
30
20
2 EVM 10
00
1 10 100 200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 20. EVM and Power Added Efficiency
versus Output Power
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
8
RF Device Data
Freescale Semiconductor







MW7IC18100NR1 equivalent, schematic
TYPICAL CHARACTERISTICS — 1800 MHz
32
PAE
31
55
50
30
Gps
29
28
IRL
27
VDD1 = 28 Vdc, Pout = 100 W CW
IDQ1 = 180 mA, IDQ2 = 1000 mA
45
40 −10
35 −15
30 −20
26 25
1760 1780 1800 1820 1840 1860 1880 1900 1920 1940
f, FREQUENCY (MHz)
Figure 29. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ Pout = 100 Watts CW
− 25
32 60
31
Gps
30
29 PAE
28
VDD1 = 28 Vdc, Pout = 40 W Avg.
IDQ1 = 215 mA, IDQ2 = 800 mA
EDGE Modulation
50
40
30
20
27
IRL
26 10
EVM
25 0
1760 1780 1800 1820 1840 1860 1880 1900 1920 1940
f, FREQUENCY (MHz)
Figure 30. Power Gain, Input Return Loss, EVM and Power
Added Efficiency versus Frequency @ Pout = 40 Watts Avg.
− 10
− 15
− 20
− 25
− 30
33
32
1000 mA
31
750 mA
30
500 mA
29
IDQ2 = 1500 mA
1250 mA
28 VDD = 28 Vdc, IDQ1 = 180 mA
f = 1840 MHz
27
1 10 100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 31. Two - Tone Power Gain versus
Output Power @ IDQ1 =180 mA
36
35 IDQ1 = 270 mA
34 225 mA
33
VDD = 28 Vdc, IDQ2 = 1000 mA
f = 1840 MHz
32 180 mA
31
135 mA
30
29
28
90 mA
27
26
1 10 100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 32. Two - Tone Power Gain versus
Output Power @ IDQ2 = 1000 mA
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
16
RF Device Data
Freescale Semiconductor










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