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PDF ( 数据手册 , 数据表 ) 908E621

零件编号 908E621
描述 Integrated Quad Half-Bridge and Triple High-Side
制造商 Freescale Semiconductor
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908E621 数据手册, 描述, 功能
Freescale Semiconductor
Technical Data
Integrated Quad Half-bridge and
Triple High Side with Embedded
MCU and LIN for High End
Mirror
The 908E621 is an integrated single package solution that
includes a high performance HC08 microcontroller with a
SMARTMOS analog control IC. The HC08 includes flash memory, a
timer, enhanced serial communications interface (ESCI), a 10 bit
analog-to-digital converter (ADC), internal serial peripheral interface
(SPI), and an internal clock generator module (ICG). The analog
control die provides four half-bridge and three high side outputs with
diagnostic functions, a Hall effect sensor input, analog inputs, voltage
regulator, window watchdog, and local interconnect network (LIN)
physical layer.
The single package solution, together with LIN, provides optimal
application performance adjustments and space saving PCB design.
It is well-suited for the control of automotive high end mirrors.
Features
• High performance M68HC908EY16 core
• 16 KB of on-chip flash memory, 512 B of RAM
• Two 16-bit, two-channel timers
• LIN physical layer interface
• Autonomous MCU watchdog / MCU supervision
• One analog input with switchable current source
• Four low RDS(ON) half-bridge outputs
• Three low RDS(ON) high side outputs
• Wake-up and 2 or 3-pin Hall effect sensor input
• 12 microcontroller I/Os
• Pb-free packaging designated by suffix codes EK
Document Number: MM908E621
Rev. 6.0, 4/2012
908E621
QUAD HALF-BRIDGE AND TRIPLE HIGH SIDE
SWITCH WITH EMBEDDED MCU AND LIN
EK (Pb-Free)
98ASA10712D
54-PIN SOICW-EP
ORDERING INFORMATION
Device
(Add an R2 suffix for
Tape and reel orders)
Temperature
Range (TA)
Package
MM908E621ACPEK
-40 to 85°C 54 SOICW-EP
100 nF
4.7 μF
μC PortA
μC PortB
μC PortC
μC PortD
μC PortE
Internally Connected
Internally Connected
LIN VSP1:8]
VDDA/VREFH
L0
EVDD
VDD
HB1
VSSA/VREFL
EVSS
VSS
908E621
HB2
HB3
RST A
RST
HB4
IRQ A
IRQ
HS1
PTA/KBD0
PTA1/KBD1
HS2
PTA2/KBD2
PTA3/KBD3
HS3
PTA4/KBD4
HVDD
PTB3/AD3
A0
PTB4/AD4
PTB5/AD5
A0CST
PTC2/MCLK
H0
PTC3/OSC2
PTC4/OSC1
TESTMODE
PTD0/TACH0
PTD1/TACH1
PTE1/RXD
EP
GND[1:4]
>22 μF
Wake-up Input
100 nF
M
M 4 x Half-brideOutputs
M
High Side Output 1
High Side Output 2
High Side Output 3
Switched 5.0 V Output
Analog Input with Curet Source
Analog Input Current Source Trim
Two 3-pin Hall Sensor Input
Pull to GND for User Mode
Figure 1. 908E621 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007-2012. All rights reserved.







908E621 pdf, 数据表
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40 °C TJ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
SUPPLY VOLTAGE RANGE
Nominal Operating Voltage
Extended Operating Voltage (LIN only 8…18 V)(8)
VSUP1
9.0
16 V
VSUP2
7.5
20 V
SUPPLY CURRENT RANGE
Normal Mode(8)
VSUP = 12 V, Analog Chip in Normal Mode (PSON=1), MCU Operating
Using Internal Oscillator at 32 MHz (8.0MHz Bus Frequency), SPI, ESCI,
IRUN
— 25 — mA
ADC Enabled
Stop Mode(8), (9)
VSUP = 12 V, Voltage Regulator with limited current capability
ISTOP — 40 50 μA
Sleep Mode(8), (9)
ISLEEP — 12 20 μA
VSUP = 12 V, Voltage Regulator off
DIGITAL INTERFACE RATINGS (ANALOG DIE)
Output pins RST_A, IRQ_A, RXD (MISO probe only)
Low-state Output Voltage (IOUT = -1.5 mA)
High-state Output Voltage (IOUT = 250 μA)
VOL
VOH
3.85
V
0.4
Output pin RXD - Capacitance(10)
COUT
– 4.0 – pF
Input pins RST_A, PWM (SS, MOSI, TXD probe only)
Input Logic Low Voltage
Input Logic High Voltage
Input pins - Capacitance(10)
V
VIL – – 1.5
VIH 3.5 – –
CIN – 4.0 – pF
Pins IRQ_A, RST_A - Pull-up Resistor
Pins SS - Pull-up Resistor
Pins MOSI, SPSCK, PWM - Pull-down Resistor
Pin TXD - Pull-up Current Source
RPULLUP1
10
– kΩ
RPULLUP2
100
– kΩ
RPULLDOWN
100
– kΩ
IPULLUP
35
μA
Notes
7. Device is fully functional, but some of the parameters might be out of spec.
8. Total current measured at GND pins.
9. Stop and Sleep mode current will increase if VSUP exceeds 15 V.
10. This parameter is guaranteed by process monitoring but is not production tested.
908E621
8
Analog Integrated Circuit Device Data
Freescale Semiconductor







908E621 equivalent, schematic
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
TIMING DIAGRAMS
LIN, L0
10k 1nF
Transient Pulse
Generator
Note: Waveform in accordance to ISO7637 part 1, test pulses 1, 2, 3a and 3b.
Figure 4. Test Circuit for Transient Test Pulses
VVSSUUPP
TXD
RXD
R0
LIN C0 R‚‚‚ÄÄÄ0¢¢¢R---a6516510n60k00.0ad0000OnkCOOΩΩdhΩ0mhhCaammaC0nnanonddaacddmonn161mdd1b0..8nb610inFi.0n8anantFitFoionnss::
Figure 5. Test Circuit for LIN Timing Measurements
TXD
VLIN
LIN
RXD
tDOM-MIN
58.1% VSUP
40% VSUP
tDOM-MAX
28.4% VSUP
tREC-MAX
74.4% VSUP
60% VSUP
42.2% VSUP
tREC-MIN
tRL tRH
Figure 6. LIN Timing Measurements for Normal Slew Rate
908E621
16
Analog Integrated Circuit Device Data
Freescale Semiconductor










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