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PDF ( 数据手册 , 数据表 ) 2N3906-G

零件编号 2N3906-G
描述 General Purpose transistor
制造商 Comchip Technology
LOGO Comchip Technology LOGO 


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2N3906-G 数据手册, 描述, 功能
General Purpose Transistor
2N3906-G (PNP)
RoHS Device
SMD Diodes Specialist
Features
-PNP silicon epitaxial planar transistor for
switching and amplifier application.
-As complementary type, the NPN transistor
2N3904-G is recommended.
-This transistor is available in the SOT-23
case with the type designation MMBT3906-G.
Collector
3
www.DataSheet4U.com
2
Base
1
Emitter
TO-92
0.1 85(4.70 )
0.1 73(4.40 )
0.020(0.51)
0.014(0.36)
0.0 22(0.55 )
0.0 15(0.38 )
0.135(3.43) Min.
0.055(1.14)
0.043(1.10)
0.015(0.38) Max.
0.063(1.60) Max.
0.0 50(1.27 ) Typ.
0.1 04(2.64 )
0.0 96(2.44 )
123
1. Emitter
2. Base
3. Collector
Dimensions in inches and (millimeter)
Maximum Ratings(TA=25oC unless otherwise noted)
Parameter
Symbol
Min
Max
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
VCBO
VCEO
VEBO
IC
-40
-40
-5
-0.2
Col lec tor di ssipa tion
St or ag e tempe rat ur e an d jun ction tempe rat ur e
PC
TSTG , TJ
-55
0. 62 5
+1 50
Unit
V
V
V
A
W
O
C
QW-BTR05
REV:A
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