|
|
零件编号 | MG150J1ZS50 | ||
描述 | Silicon N Channel IGBT | ||
制造商 | Toshiba Semiconductor | ||
LOGO | |||
1 Page
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1ZS50
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance
l Includes a complete half bridge in one package.
l Enhancement-mode
l High speed : tf = 0.30µs (max) (IC = 150A)
trr = 0.15µs (max) (IF = 150A)
l Low saturation voltage
: VCE (sat) = 2.70V (max) (IC = 150A)
Equivalent Circuit
MG150J1ZS50
Unit: mm
JEDEC
JEITA
TOSHIBA
―
―
2-95A3A
www.DataSheet4U.com Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
VR
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
―
Rating
600
±20
600
150
300
150
300
780
150
−40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
V
A
A
W
°C
°C
V
N·m
1 2001-08-16
|
|||
页数 | 6 页 | ||
下载 | [ MG150J1ZS50.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
MG150J1ZS50 | Silicon N Channel IGBT | Toshiba Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |