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PDF ( 数据手册 , 数据表 ) MG150J1ZS50

零件编号 MG150J1ZS50
描述 Silicon N Channel IGBT
制造商 Toshiba Semiconductor
LOGO Toshiba Semiconductor LOGO 


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MG150J1ZS50 数据手册, 描述, 功能
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J1ZS50
High Power Switching Applications
Motor Control Applications
l The electrodes are isolated from case.
l High input impedance
l Includes a complete half bridge in one package.
l Enhancement-mode
l High speed : tf = 0.30µs (max) (IC = 150A)
trr = 0.15µs (max) (IF = 150A)
l Low saturation voltage
: VCE (sat) = 2.70V (max) (IC = 150A)
Equivalent Circuit
MG150J1ZS50
Unit: mm
JEDEC
JEITA
TOSHIBA
2-95A3A
www.DataSheet4U.com Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC
1ms
Forward current
DC
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
VR
IC
ICP
IF
IFM
PC
Tj
Tstg
VIsol
Rating
600
±20
600
150
300
150
300
780
150
40 ~ 125
2500
(AC 1 min.)
3/3
Unit
V
V
V
A
A
W
°C
°C
V
N·m
1 2001-08-16












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