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零件编号 | ZVN0535A | ||
描述 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | ||
制造商 | Zetex Semiconductors | ||
LOGO | |||
1 Page
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 350 Volt VDS
* RDS(on)=50Ω
ZVN0535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
DG
S
E-Line
TO92 Compatible
VALUE
350
90
600
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS 350
V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) 1 3 V ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
20 nA VGS=± 20V, VDS=0V
10 µA VDS=350 V, VGS=0
400 µA VDS=280 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
ID(on)
150
Static Drain-Source On-State RDS(on)
Resistance (1)
50
mA VDS=25 V, VGS=10V
Ω VGS=10V,ID=100mA
Forward Transconductance(1)(2gfs
)
100
mS VDS=25V,ID=100mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
70 pF
10 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
4 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
7
7
16
10
3-353
ns
ns VDD≈25V, ID=100mA
ns
ns
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页数 | 3 页 | ||
下载 | [ ZVN0535A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
ZVN0535A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
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