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PDF ( 数据手册 , 数据表 ) IS23SC1604

零件编号 IS23SC1604
描述 16-KBIT SECURED SERIAL EEPROM
制造商 ISSI
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IS23SC1604 数据手册, 描述, 功能
IS23SC1604
16-KBIT SECURED SERIAL EEPROM
ISSI®
ADVANCE INFORMATION
APRIL 2003
FEATURES
• 16K serial EEPROM with security features
• Comply with ISO/IEC Standard 7816-3
Synchronous Protocol
• Store and validate security codes
• Four protected application zones
• Provide transport code security
• Single 5V power supply for read/write/erase
operations
• Low power operation:
— 15 µA (max.) standby current
— 3 mA (max.) read current at 300 KHz
— 4 mA (max.) write/erase current
• 2 ms read access time at 300 KHz;
5 ms write cycle time
• 300 KHz serial clock rate
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• High ESD protection: > 4 KV
• High reliability:
— 1,000,000 erase/write cycles
— 10 years data retention
• Standard CMOS Process
• Wide operating temperature range
— 0°C to +70°C Commercial; –40°C to +85°C
Industrial
• Data access only after validation of security
code
• Permanent invalidation of device upon eight
consecutive failed attempts to enter the correct
security code
• Separate read/write/erase access protections
for each application zone
• Allow the memory chip to be personalized if the
internal security fuse is not blown. If the internal
security fuse is blown, maximum security protection
of the memory will always be enabled.
DESCRIPTION
IS23SC1604 is a low-cost, low-power, highly secured
16K bits (2K x 8) serial EEPROM. It is fabricated using
ISSI’s advanced CMOS technology.
The security features of IS23SC1604 provide high levels
of memory security protection for smart card applications.
The memory is partitioned into four application zones.
Each individual application zone is protected by multiple
security codes from unauthorized read/write/erase
access to the zone. In addition, an internal security fuse
is available for the card issuer to fully personalize the
device before releasing it to customer.
The device also features an internal high-voltage charge
pump for memory programming, 1,000,000 write/erase
cycles and ten years of data retention.
Pin Configuration: 8-pin Plastic DIP
Vcc
RST
CLK
FUS
C1
C2
C3
C4
C5 GND
C6 NC
C7 I/O
C8 PGM
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00E
04/10/03
1







IS23SC1604 pdf, 数据表
IS23SC1604
Reset Timing Diagram
Address
CLK
RST
I/O
tRH
Read Timing Diagram
ISSI®
Address = 0
tDVR
Output Data Valid
Address
CLK
tOH
I/O
tDV
Ax
tCLK
Output Data Valid
Ax + 1
tOH
8 Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCEINFORMATION Rev. 00E
04/10/03







IS23SC1604 equivalent, schematic
IS23SC1604
ISSI®
MEMORY ACCESS TABLE
Security Level One
At security level one (security fuse not blown and FUS pad at Vcc), the memory access is controlled by Security Code
Valid Comparison Flag (SV) and Application Zone ‘n’ read flag (Rn).
Memory Access Conditions At Security Level 1 (Device Personalization)
Fields
SV
Rn Read
FZ X
X Yes
IZ 0 X Yes
1 X Yes
SC 0
1
X No
X Yes
SCAC
0
1
X Yes
X Yes
CPZ 0
1
X Yes
X Yes
SCn 0
1
X No
X Yes
S1AC
0
1
X Yes
X Yes
EZn 0
1
X No
X Yes
EnAC
0
X Yes
1 X Yes
AZn 0
0
1
0 No
1 Yes
X Yes
MTZ
X
X Yes
Note:
1. ‘n’ corresponds to Application Zone ‘n’ where ‘n’ = 1, 2, 3, or 4.
Erase
(Write ‘1’)
No
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
No
Yes
Yes
Write
(Write ‘0’)
No
No
Yes
No
Yes
Yes
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
Yes
No
No
Yes
Yes
Compare
No
No
No
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
16 Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCEINFORMATION Rev. 00E
04/10/03










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