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PDF ( 数据手册 , 数据表 ) XP1019-BD

零件编号 XP1019-BD
描述 GaAs MMIC Power Amplifier
制造商 Mimix Broadband
LOGO Mimix Broadband LOGO 


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XP1019-BD 数据手册, 描述, 功能
17.0-24.0 GHz GaAs MMIC
Power Amplifier
July 2006 - Rev 30-Jul-06
Features
Excellent Transmit Output Stage
Temperature Compensated Output Detector
18.0 dB Small Signal Gain
+27.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s three stage 17.0-24.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +27.0 dBm P1dB output compression point
across much of the band.The device also includes an
on-chip temperature compensated output power
detector.This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
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either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
P1019-BD
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
145, 290, 580 mA
+0.3 VDC
+19.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB) 2
Drain Bias Voltage (Vd1,2,3) (Vdet)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm3
(2) Measured using constant current.
(3) Measured with Vd4=5.0V
Units Min. Typ. Max.
GHz 17.0 - 24.0
dB - 9.0 -
dB - 10.0 -
dB - 18.0 -
dB - +/-1.0 -
dB - 45.0 -
dBm - +27.0 -
VDC - +5.0 +5.5
VDC -1.0 -0.7 0.0
mA - 100 120
mA - 200 240
mA - 400 480
VDC - 0.38 -
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.







XP1019-BD pdf, 数据表
17.0-24.0 GHz GaAs MMIC
Power Amplifier
July 2006 - Rev 30-Jul-06
P1019-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any
on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-
tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280º C
(Note: Gold Germanium should be avoided).The work station temperature should be 310ºC +/- 10ºC. Exposure to these
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Part Number for Ordering
XP1019-BD-000X
XP1019-BD-EV1
Description
Where “X” is RoHS compliant die packed in “V” - vacuum release gel paks or
“W” - waffle trays
XP1019 die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 8
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.














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