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零件编号 | NJ903L | ||
描述 | Silicon Junction Field-Effect Transistor | ||
制造商 | INTERFET | ||
LOGO | |||
1 Page
F-42
NJ903L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ903L Process.
Datasheet
IF9030
www.DataSheet4U.com
01/99
G
S-D D-S
S-D
G
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
D-S
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ903L Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 20 – 25
V IG = – 1 µA, VDS = ØV
IGSS – 5 – 500 pA VGS = – 15V, VDS = ØV
IDSS 5
500 mA VDS = 10V, VGS = ØV
VGS(OFF) – 0.1
– 3 V VDS = 10V, ID = 1 nA
Ciss
50
pF VDS = ØV, VGS = – 10V
f = 1 MHz
Crss
18
pF VDS = ØV, VGS = – 10V
f = 1 MHz
e¯N
0.5 nV/√HZ VDG = 4V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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页数 | 2 页 | ||
下载 | [ NJ903L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NJ903 | Silicon Junction Field-Effect Transistor | INTERFET |
NJ903L | Silicon Junction Field-Effect Transistor | INTERFET |
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