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零件编号 | CEB20N06 | ||
描述 | N-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | CET | ||
LOGO | |||
1 Page
CEP20N06/CEB20N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 25A, RDS(ON) =55mΩ @VGS = 10V.
RDS(ON) =75mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
60
±20
25
70
83
0.56
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.8
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
2004.June
4 - 58
http://www.cetsemi.com
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页数 | 4 页 | ||
下载 | [ CEB20N06.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CEB20N06 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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