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零件编号 | CEA6861 | ||
描述 | P-Channel Enhancement Mode Field Effect Transistor | ||
制造商 | CET | ||
LOGO | |||
1 Page
CEA6861
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D
D
SOT-89
S
D
G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -60
VGS ±20
ID -2.4
IDM -10
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com
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页数 | 4 页 | ||
下载 | [ CEA6861.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
CEA6861 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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