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PDF ( 数据手册 , 数据表 ) FDS2734

零件编号 FDS2734
描述 N-Channel MOSFET
制造商 Fairchild Semiconductor
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FDS2734 数据手册, 描述, 功能
August 2006
FDS2734
N-Channel UItraFET Trench® MOSFET
250V, 3.0A, 117m
tm
Features
„ Max rDS(on) =117mat VGS =10V, ID = 3.0A
„ Max rDS(on) =126mat VGS = 6V, ID = 2.8A
„ Fast switching speed
„ High performance trench
low rDS(on)
technology for
extremely
„ High power and current handling capability
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
„ DC-DC conversion
„ RoHS compliant
D
D
D
D
SO-8
Pin 1
G
S
S
S
www.DataSheet4U.com
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note 1a)
EAS Single Pulse Avalanche Energy
PD
Power dissipation
Power dissipation
(Note 3)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
250
±20
3.0
50
12.5
2.5
1.0
-55 to 150
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction- to -Ambient
Thermal Resistance, Junction- to- Ambient
Thermal Resistance, Junction -to- Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking
FDS2734
Device
FDS2734
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Units
V
V
A
mJ
W
oC
oC/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
1
www.fairchildsemi.com












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