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零件编号 | FDS2734 | ||
描述 | N-Channel MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
August 2006
FDS2734
N-Channel UItraFET Trench® MOSFET
250V, 3.0A, 117mΩ
tm
Features
Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A
Max rDS(on) =126mΩ at VGS = 6V, ID = 2.8A
Fast switching speed
High performance trench
low rDS(on)
technology for
extremely
High power and current handling capability
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
RoHS compliant
D
D
D
D
SO-8
Pin 1
G
S
S
S
www.DataSheet4U.com
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note 1a)
EAS Single Pulse Avalanche Energy
PD
Power dissipation
Power dissipation
(Note 3)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
250
±20
3.0
50
12.5
2.5
1.0
-55 to 150
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction- to -Ambient
Thermal Resistance, Junction- to- Ambient
Thermal Resistance, Junction -to- Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking
FDS2734
Device
FDS2734
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Units
V
V
A
mJ
W
oC
oC/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
1
www.fairchildsemi.com
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页数 | 6 页 | ||
下载 | [ FDS2734.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FDS2734 | N-Channel MOSFET | Fairchild Semiconductor |
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