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零件编号 | NGD15N41CL | ||
描述 | Ignition IGBT | ||
制造商 | ON Semiconductor | ||
LOGO | |||
1 Page
NGD15N41CL,
NGB15N41CL,
NGP15N41CL
Preferred Device
Ignition IGBT
15 Amps, 410 Volts
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
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• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
440
440
15
15
50
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 107
0.71
Operating and Storage Temperature Range
TJ, Tstg −55 to
+175
Unit
VDC
VDC
VDC
ADC
AAC
kV
V
Watts
W/°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
4
12
3
E
DPAK
CASE 369C
STYLE 2
12
3
4 D2PAK
CASE 418B
STYLE 4
4
TO−220AB
CASE 221A
STYLE 9
12
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 7
1
Publication Order Number:
NGD15N41CL/D
NGD15N41CL, NGB15N41CL, NGP15N41CL
ORDERING INFORMATION
Device
Package Type
Shipping†
NGD15N41CLT4
DPAK
2500/Tape & Reel
NGD15N41CLT4G
DPAK
(Pb−Free)
2500/Tape & Reel
NGB15N41CLT4
D2PAK
800/Tape & Reel
NGB15N41CLT4G
D2PAK
(Pb−Free)
800/Tape & Reel
NGP15N41CL
TO−220
50 Units/Rail
NGP15N41CLG
TO−220
(Pb−Free)
50 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
MARKING DIAGRAMS
DPAK
CASE 369C
STYLE 7
1
Gate
2
Collector
YWW
GD
15N41G
3
Emitter
4
Collector
D2PAK
CASE 418B
STYLE 4
4
Collector
NGB
15N41CLG
AYWW
13
Gate
2
Emitter
Collector
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
TO−220AB
CASE 221A
STYLE 9
4
Collector
NGP
15N41CLG
AYWW
1
Gate
3
Emitter
2
Collector
http://onsemi.com
8
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页数 | 11 页 | ||
下载 | [ NGD15N41CL.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
NGD15N41CL | Ignition IGBT | ON Semiconductor |
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