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PDF ( 数据手册 , 数据表 ) AU5517

零件编号 AU5517
描述 Dual Operational Transconductance Amplifier
制造商 ON Semiconductor
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AU5517 数据手册, 描述, 功能
NE5517, NE5517A, AU5517
Dual Operational
Transconductance Amplifier
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance of the buffers on the chip allow general use of
the AU5517/NE5517. These buffers are made of Darlington
transistors and a biasing network that virtually eliminate the change of
offset voltage due to a burst in the bias current IABC, hence eliminating
the audible noise that could otherwise be heard in high quality audio
applications.
Features
Constant Impedance Buffers
DVBE of Buffer is Constant with Amplifier IBIAS Change
Excellent Matching Between Amplifiers
Linearizing Diodes
High Output Signal-to-Noise Ratio
PbFree Packages are Available*
Applications
Multiplexers
Timers
Electronic Music Synthesizers
Dolby® HX Systems
Current-Controlled Amplifiers, Filters
Current-Controlled Oscillators, Impedances
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
June, 2013 Rev. 4
1
http://onsemi.com
MARKING
DIAGRAMS
SOIC16
1
D SUFFIX
CASE 751B
xx5517DG
AWLYWW
1
1
PDIP16
N SUFFIX
CASE 648
NE5517yy
AWLYYWWG
1
xx = AU or NE
yy = AN or N
A = Assembly Location
WL = Wafer Lot
YY, Y = Year
WW = Work Week
G = PbFree Package
PIN CONNECTIONS
N, D Packages
IABCa 1
Da 2
+INa 3
INa 4
VOa 5
V6
INBUFFERa 7
VOBUFFERa 8
16 IABCb
15 Db
14 +INb
13 INb
12 VOb
11 V+
10 INBUFFERb
9 VOBUFFERb
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
Publication Order Number:
NE5517/D







AU5517 pdf, 数据表
NE5517, NE5517A, AU5517
Linearizing Diodes
For VIN greater than a few millivolts, Equation 3 becomes
invalid and the transconductance increases non-linearly.
Figure 22 shows how the internal diodes can linearize the
transfer function of the operational amplifier. Assume D2
and D3 are biased with current sources and the input signal
current is IS. Since I4 + I5 = IB and I5 I4 = I0,
that is: I4 = (IB I0), I5 = (IB + I0)
Impedance Buffer
The upper limit of transconductance is defined by the
maximum value of IB (2.0 mA). The lowest value of IB for
which the amplifier will function therefore determines the
overall dynamic range. At low values of IB, a buffer with
very low input bias current is desired. A Darlington
amplifier with constant-current source (Q14, Q15, Q16, D7,
D8, and R1) suits the need.
+VS APPLICATIONS
ID
ID
2
*
IS
ID
2
)
IS
ǒ ǓI0 + 2 IS
IB
ID
I0 + I5 * I4
D3
1/2ID
IS IS
1/2ID
I4
D2
Q4
I5
I5
IB
VS
Figure 22. Linearizing Diode
For the diodes and the input transistors that have identical
geometries and are subject to similar voltages and
temperatures, the following equation is true:
T
q
In
ID
2
ID
2
)
*
IS
IS
+
KT
q
In
1ń2(IB ) IO)
1ń2(IB * IO)
IO
+
IS
2IB
ID
for
|IS|
t
ID
2
(eq. 6)
The only limitation is that the signal current should not
exceed ID.
Voltage-Controlled Amplifier
In Figure 23, the voltage divider R2, R3 divides the
input-voltage into small values (mV range) so the amplifier
operates in a linear manner.
It is:
IOUT
+
*VIN
@
R2
R3
)
R3
@
gM;
VOUT + IOUT @ RL;
A
+
VOUT
VIN
+
R2
R3
)
R3
@
gM
@
RL
(3) gM = 19.2 IABC
(gM in mmhos for IABC in mA)
Since gM is directly proportional to IABC, the amplification
is controlled by the voltage VC in a simple way.
When VC is taken relative to VCC the following formula
is valid:
IABC
+
(VC
* 1.2V)
R1
The 1.2 V is the voltage across two base-emitter baths in
the current mirrors. This circuit is the base for many
applications of the AU5517/NE5517.
VC
+VCC
R4 = R2/ /R3 3 +
R1
11 1
IABC
NE5517
57
VIN
R2
4
6
IOUT
RL
R3
TYPICAL VALUES: R1 = 47kW
R2 = 10kW
R3 = 200W
R4 = 200W
RL = 100kW
RS = 47kW
Figure 23.
INT
+VCC
8
VOUT
RS
INT
VCC
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