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PDF ( 数据手册 , 数据表 ) MC33153

零件编号 MC33153
描述 Single IGBT Gate Driver
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MC33153 数据手册, 描述, 功能
MC33153
Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dual−in−line and surface mount packages.
Features
High Current Output Stage: 1.0 A Source/2.0 A Sink
Protection Circuits for Both Conventional and Sense IGBTs
Programmable Fault Blanking Time
Protection against Overcurrent and Short Circuit
Undervoltage Lockout Optimized for IGBT’s
Negative Gate Drive Capability
Cost Effectively Drives Power MOSFETs and Bipolar Transistors
Pb−Free Packages are Available
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MARKING
DIAGRAMS
8
SOIC−8
33153
D SUFFIX
ALYW
1 CASE 751
G
1
8
PDIP−8
P SUFFIX
CASE 626
MC33153P
AWL
YYWWG
11
VCC
Fault
Output 7
VEE
Short Circuit
Latch S
Q
R
Overcurrent
Latch S
Q
R
VCC
Input
4
VEE
VCC
6
VCC
Short Circuit
Comparator
Overcurrent
Comparator
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130 mV
VCC
Current
Sense
1 Input
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
65 mV
VCC
270 mA
Fault Blanking/
Desaturation
Comparator
6.5 V
VEE Kelvin
VCC 2 GND
Fault
8 Blanking/
Desaturation
Input
VEE
PIN CONNECTIONS
Current Sense
Input
1
Kelvin GND 2
VEE 3
8
Fault Blanking/
Desaturation Input
7 Fault Output
6 VCC
VCC
Under
Voltage
Lockout
VCC
Output
Stage
100 k
Drive
5 Output
VEE
Input 4
5 Drive Output
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
12 V/
11 V
3 VEE
This device contains 133 active transistors.
Figure 1. Representative Block Diagram
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 5
1
Publication Order Number:
MC33153/D







MC33153 pdf, 数据表
MC33153
10 10
8.0
Output High
8.0
Output Low
6.0 6.0
4.0
2.0 TA = 25°C
0
5.0 10 15 20
VCC, SUPPLY VOLTAGE (V)
Figure 28. Supply Current versus
Supply Voltage
4.0
2.0
0
−60
VCC = 15 V
VPin 4 = VCC
Drive Output Open
−40 −20 0 20 40 60 80 100 120 140
TA, AMBIENT TEMPERATURE (°C)
Figure 29. Supply Current versus Temperature
80
VCC = 15 V
TA = 25°C
60
CL = 10 nF
= 5.0 nF
40
= 2.0 nF
20
= 1.0 nF
0
1.0 10 100 1000
f, INPUT FREQUENCY (kHz)
Figure 30. Supply Current versus Input Frequency
OPERATING DESCRIPTION
GATE DRIVE
Controlling Switching Times
The most important design aspect of an IGBT gate drive
is optimization of the switching characteristics. The
switching characteristics are especially important in motor
control applications in which PWM transistors are used in a
bridge configuration. In these applications, the gate drive
circuit components should be selected to optimize turn−on,
turn−off and off−state impedance. A single resistor may be
used to control both turn−on and turn−off as shown in
Figure 31. However, the resistor value selected must be a
compromise in turn−on abruptness and turn−off losses.
Using a single resistor is normally suitable only for very low
frequency PWM. An optimized gate drive output stage is
shown in Figure 32. This circuit allows turn−on and turn−off
to be optimized separately. The turn−on resistor, Ron,
provides control over the IGBT turn−on speed. In motor
control circuits, the resistor sets the turn−on di/dt that
controls how fast the free−wheel diode is cleared. The
interaction of the IGBT and free−wheeling diode determines
the turn−on dv/dt. Excessive turn−on dv/dt is a common
problem in half−bridge circuits. The turn−off resistor, Roff,
controls the turn−off speed and ensures that the IGBT
remains off under commutation stresses. Turn−off is critical
to obtain low switching losses. While IGBTs exhibit a fixed
minimum loss due to minority carrier recombination, a slow
gate drive will dominate the turn−off losses. This is
particularly true for fast IGBTs. It is also possible to turn−off
an IGBT too fast. Excessive turn−off speed will result in
large overshoot voltages. Normally, the turn−off resistor is
a small fraction of the turn−on resistor.
The MC33153 contains a bipolar totem pole output stage
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure
that the IGBT is off whenever there is insufficient VCC to the
MC33153.
In a PWM inverter, IGBTs are used in a half−bridge
configuration. Thus, at least one device is always off. While
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