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零件编号 | K8D1716UTB | ||
描述 | 16M Dual Bank NOR Flash Memory | ||
制造商 | Samsung | ||
LOGO | |||
1 Page
K8D1716UTB / K8D1716UBB
FLASH MEMORY
Document Title
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
July 25, 2004
Remark
Advance
1 Revision 0.0
July 2004
K8D1716UTB / K8D1716UBB
FLASH MEMORY
COMMAND DEFINITIONS
The K8D1716U operates by selecting and executing its operational modes. Each operational mode has its own command set. In
order to select a certain mode, a proper command with specific address and data sequences must be written into the command reg-
ister. Writing incorrect information which include address and data or writing an improper command will reset the device to the read
mode. The defined valid register command sequences are stated in Table 8. Note that Erase Suspend (B0H) and Erase Resume
(30H) commands are valid only while the Block Erase Operation is in progress.
Table 8. Command Sequences
1st Cycle
Command Sequence Cycle
Word Byte
Read
Addr
Data
1
RA
RD
Reset
Addr
Data
1
XXXH
F0H
Autoselect
Manufacturer
ID (2,3)
Addr
Data
4
555H AAAH
AAH
Autoselect
Device Code
(2,3)
Autoselect
Block Group
Protect Verify
(2,3)
Auto Select
Secode Block
Factory Protect
Verify (2,3)
Enter Secode
Block Region
Exit Secode
Block Region
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass
Reset
Chip Erase
Block Erase
Block Erase
Suspend (4, 5)
Block Erase
Resume
CFI Query (6)
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
4
4
4
3
4
4
3
2
2
6
6
1
1
1
555H AAAH
AAH
555H AAAH
AAH
555H AAAH
AAH
555H AAAH
AAH
555H AAAH
AAH
555H AAAH
AAH
555H AAAH
AAH
XXXH
A0H
XXXH
90H
555H AAAH
AAH
555H AAAH
AAH
XXXH
B0H
XXXH
30H
55H AAH
98H
2nd Cycle
Word Byte
2AAH 555H
55H
2AAH 555H
55H
2AAH 555H
55H
2AAH 555H
55H
2AAH 555H
55H
2AAH 555H
55H
2AAH 555H
55H
2AAH 555H
55H
PA
PD
XXXH
00H
2AAH 555H
55H
2AAH 555H
55H
3rd Cycle
Word Byte
DA/ DA/
555H AAAH
90H
DA/ DA/
555H AAAH
90H
DA/ DA/
555H AAAH
90H
DA/ DA/
555H AAAH
90H
555H AAAH
88H
555H AAAH
90H
555H AAAH
A0H
555H AAAH
20H
555H AAAH
80H
555H AAAH
80H
4th Cycle
Word Byte
5th Cycle
Word Byte
DA/ DA/
X00H X00H
ECH
DA/ DA/
X01H X02H
(See Table 9)
BA / BA/
X02H X04H
(See Table 9)
DA /
DA/
X03H X06H
(See Table 9)
XXXH
00H
PA
PD
555H AAAH
AAH
555H AAAH
AAH
2AAH 555H
55H
2AAH 555H
55H
6th Cycle
Word Byte
555H AAAH
10H
BA
30H
8 Revision 0.0
July 2004
K8D1716UTB / K8D1716UBB
FLASH MEMORY
Table 10. Block Group Address (Top Boot Block)
Block Group
Block Address
A19 A18 A17 A16 A15 A14 A13 A12
BGA0
0 0 0 0 0XXX
01
BGA1
0 0 0 1 0XXX
11
BGA2
0 0 1XXXXX
BGA3
0 1 0XXXXX
BGA4
0 1 1XXXXX
BGA5
1 0 0XXXXX
BGA6
1 0 1XXXXX
BGA7
1 1 0XXXXX
1 1 1 0 0XXX
BGA8
1 1 1 0 1XXX
1 1 1 1 0XXX
BGA9
11111000
BGA10
11111001
BGA11
11111010
BGA12
11111011
BGA13
11111100
BGA14
11111101
BGA15
11111110
BGA16
11111111
Block
BA0
BA1 to BA3
BA4 to BA7
BA8 to BA11
BA12 to BA15
BA16 to BA19
BA20 to BA23
BA24 to BA27
BA28 to BA30
BA31
BA32
BA33
BA34
BA35
BA36
BA37
BA38
16 Revision 0.0
July 2004
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页数 | 30 页 | ||
下载 | [ K8D1716UTB.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
K8D1716UTB | 16M Dual Bank NOR Flash Memory | Samsung |
K8D1716UTC | 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory | Samsung semiconductor |
K8D1716UTC | 16M-Bit Dual Bank NOR Flash Memory | Samsung Electronics |
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