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PDF ( 数据手册 , 数据表 ) HN29WB800

零件编号 HN29WB800
描述 (HN29WB800 / HN29WT800) CMOS Flash Memory
制造商 Hitachi Semiconductor
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HN29WB800 数据手册, 描述, 功能
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HN29WT800 Series
HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
ADE-203-537A(Z)
Rev. 1.0
May. 9, 1997
Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash
Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic
Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low
power and high performance systems such as mobile, personal computing and communication products.
Features
On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
Access time: 80/100/120 ns (max)
Low power dissipation:
ICC = 30 mA (max) (Read)
ICC = 200 µA (max) (Standby)
ICC = 40 mA (max) (Program)
ICC = 40 mA (max) (Erase)
ICC = 1 µA (typ) (Deep powerdown)
Automatic page programming:
Programming time: 25 ms (typ)
Program unit: 128 word
Automatic erase:
Erase time: 50 ms (typ)
Erase unit: Boot block; 8-kword/16-kbyte × 1
Parameter block; 4-kword/8-kbyte × 2
Main block; 16-kword/32-kbyte × 1
32-kword/64-kbyte × 15
This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.







HN29WB800 pdf, 数据表
HN29WT800 Series, HN29WB800 Series
Bottom Boot Block Address Map*1
Address
Size
Block
A18 A17 A16 A15 A14 A13 A12 × 8 (Byte mode)
Block18 1 1 1 1 × × × 64-kbyte
Block17 1 1 1 0 × × × 64-kbyte
Block16 1 1 0 1 × × × 64-kbyte
Block15 1 1 0 0 × × × 64-kbyte
Block14 1 0 1 1 × × × 64-kbyte
Block13 1 0 1 0 × × × 64-kbyte
Block12 1 0 0 1 × × × 64-kbyte
Block11 1 0 0 0 × × × 64-kbyte
Block10 0 1 1 1 × × × 64-kbyte
Block9 0 1 1 0 × × × 64-kbyte
Block8 0 1 0 1 × × × 64-kbyte
Block7 0 1 0 0 × × × 64-kbyte
Block6 0 0 1 1 × × × 64-kbyte
Block5 0 0 1 0 × × × 64-kbyte
Block4 0 0 0 1 × × × 64-kbyte
Block3 0 0 0 0 1 × × 32-kbyte
Block2 0 0 0 0 0 1 1 8-kbyte
Block1 0 0 0 0 0 1 0 8-kbyte
Block0 0 0 0 0 0 0 × 16-kbyte
Note: 1. × can be VIH. Address except block address must be VIH.
× 16 (Word mode)
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
32-kword
16-kword
4-kword
4-kword
8-kword
8







HN29WB800 equivalent, schematic
HN29WT800 Series, HN29WB800 Series
DC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
Parameter
Symbol Min
Typ Max Unit Test conditions
Input leakage current
ILI –1 — 1
µA Vin = VSS to VCC
Output leakage current
ILO –10 — 10 µA Vout = VSS to VCC
Standby VCC current
ISB1
50 200
µA Vin = VIH/VIL, CE = RP = WP = VIH
ISB2
15
µA Vin = VSS or VCC,
CE = RP = WP = VCC ± 0.3 V
Deep powerdown VCC current ISB3
5 15
µA Vin = VIH/VIL, RP = VIL
ISB4
15
µA Vin = VSS or VCC, RP = VSS ± 0.3 V
Read VCC current
I CC1
7 30
mA Vin = VIH/VIL, CE = VIL,
RP = OE = VIH, f = 10 MHz,
Iout = 0 mA
Write VCC current
I CC2
— 30
mA Vin = VIH/VIL, CE = WE = VIL,
RP = OE = VIH
Programming VCC current
I CC3
— 40
mA Vin = VIH/VIL, CE = RP = WP = VIH
Erasing VCC current
I CC4
— 40
mA Vin = VIH/VIL, CE = RP = WP = VIH
Suspend VCC current
I CC5
— 200
µA Vin = VIH/VIL, CE = RP = WP = VIH
RP all block unlocked current IRP
— 100
µA RP = VHH max
A9 intelligent identifier current IID
— 100
µA A9 = VID max
A9 intelligent identifier voltage VID
11.4 12.0 12.6 V
RP unlocked voltage
VHH 11.4 12.0 12.6 V
Input voltage
VIL
–0.5 — 0.8
V
VIH 2.0 — VCC + 0.5 V
Output voltage
VOL
— 0.45 V IOL = 5.8 mA
VOH1
0.85 ×
VCC
V IOH = –2.5 mA
VOH2
VCC - 0.4 —
V IOH = –100 µA
Low VCC lock-out voltage*2 VLKO 1.2
——
V
Notes: 1. All currents are RMS unless otherwise noted. Typical values at VCC = 3.3 V, Ta = 25˚C.
2. To protect initiation of write cycle during VCC powerup/powerdown, a write cycle is locked out for VCC
less than VLKO. If VCC is less than VLKO Write State Machine is reset to read mode. When the Wirte
State Machine is in Busy state, if VCC is less than VLKO, the alternation of memory contents may
occur.
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