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零件编号 | K6F1616U6A | ||
描述 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | ||
制造商 | Samsung semiconductor | ||
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K6F1616U6A Family
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize
- added 45ns product
- changed ICC1 : 3mA to 2mA
- changed ICC2 : 38mA to 30mA for 55ns product
30mA to 25mA for 70ns product
1.1 Revise
- Deleted 45ns product
Draft Date
Remark
September 11, 2001 Preliminary
January 4, 2002
Final
September 11, 2002 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.1
September 2002
K6F1616U6A Family
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)
Address
CS1
tWC
tCW(2)
tAW
tWR(4)
CS2
UB, LB
WE
Data in
tAS(3)
tBW
tWP(1)
tDW tDH
Data Valid
CMOS SRAM
Data out
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS1 and low WE. A write begins when CS1 goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran-
sition when CS1 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the CS1 going low to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends with CS1 or WE going high.
DATA RETENTION WAVE FORM
CS1 controlled
VCC
2.7V
tSDR
Data Retention Mode
tRDR
2.2V
VDR
CS1
GND
CS2 controlled
VCC
2.7V
CS2
VDR
0.4V
GND
tSDR
CS1≥VCC - 0.2V
Data Retention Mode
CS2≤0.2V
tRDR
8 Revision 1.1
September 2002
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页数 | 9 页 | ||
下载 | [ K6F1616U6A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
K6F1616U6A | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
K6F1616U6C | 16Mb(1M x 16 bit) Low Power SRAM | Samsung semiconductor |
K6F1616U6M | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung semiconductor |
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