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PDF ( 数据手册 , 数据表 ) GWM120-0075P3

零件编号 GWM120-0075P3
描述 Six-Pack MOSFET Modules
制造商 IXYS Corporation
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GWM120-0075P3 数据手册, 描述, 功能
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GWM 120-0075P3
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
VDSS = 75 V
ID25 = 125 A
RDSon typ. = 3.7 m
L+
G3 G5
G1
S3 S5
S1
L1
L2
L3
G4 G6
G2
S4 S6
S2
L-
MOSFETs
Symbol
VDSS
VGS
ID25
ID90
IF25
IF90
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
TC = 25°C (diode)
TC = 90°C (diode)
Maximum Ratings
75 V
±20 V
125 A
95 A
130 A
85 A
Symbol
RDSon
VGSth
I
DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
TVJ = 25°C
VGS = 10 V; ID = 60 A TVJ = 125°C
VDS = 20 V; ID = 1 mA
V
DS
=
V;
DSS
V
GS
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 60 V; ID = 25 A
3.7 4.5 m
6.4 m
2 4V
1 µA
0.1 mA
0.2 µA
91 nC
19 nC
28 nC
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10
36 ns
56 ns
130 ns
50 ns
(diode) IF = 60 A; VGS= 0 V
(diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V
with heat transfer paste
0.9 1.4 V
90 ns
0.85 K/W
1.1 K/W
Gate Pins
Power Pins
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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