DataSheet8.cn


PDF ( 数据手册 , 数据表 ) IRFW820A

零件编号 IRFW820A
描述 Advanced Power MOSFET
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


1 Page

No Preview Available !

IRFW820A 数据手册, 描述, 功能
www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
IRFW/I820A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 500V
Lower RDS(ON): 2.000(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 500 V
RDS(on) = 3.0
ID = 2.5 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
500
2.5
1.6
8
±30
208
2.5
4.9
3.5
3.1
49
0.39
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.57
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation












页数 7 页
下载[ IRFW820A.PDF 数据手册 ]


分享链接

Link :

推荐数据表

零件编号描述制造商
IRFW820AAdvanced Power MOSFETFairchild Semiconductor
Fairchild Semiconductor

零件编号描述制造商
STK15C88256-Kbit (32 K x 8) PowerStore nvSRAMCypress Semiconductor
Cypress Semiconductor
NJM4556DUAL HIGH CURRENT OPERATIONAL AMPLIFIERNew Japan Radio
New Japan Radio
EL1118-G5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLEREverlight
Everlight


DataSheet8.cn    |   2020   |  联系我们   |   搜索  |  Simemap