|
|
零件编号 | IRFW820A | ||
描述 | Advanced Power MOSFET | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
IRFW/I820A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
♦ Lower RDS(ON): 2.000Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 500 V
RDS(on) = 3.0Ω
ID = 2.5 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
500
2.5
1.6
8
±30
208
2.5
4.9
3.5
3.1
49
0.39
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.57
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
|
|||
页数 | 7 页 | ||
下载 | [ IRFW820A.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRFW820A | Advanced Power MOSFET | Fairchild Semiconductor |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |