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PDF ( 数据手册 , 数据表 ) NGB18N40CLBT4

零件编号 NGB18N40CLBT4
描述 N-Channel D2PAK
制造商 ON Semiconductor
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NGB18N40CLBT4 数据手册, 描述, 功能
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NGB18N40CLBT4
Ignition IGBT
18 Amps, 400 Volts
NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for CoilonPlug Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Integrated GateEmitter Resistor (RGE)
Emitter Ballasting for ShortCircuit Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
CollectorGate Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VCER
VGE
IC
430 VDC
430 VDC
18 VDC
18 ADC
50 AAC
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 115 Watts
0.77 W/°C
Operating and Storage Temperature Range
TJ, Tstg 55 to
+175
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
18 AMPS
400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
C
G
RGE
E
D2PAK
CASE 418B
STYLE 4
MARKING
DIAGRAM
4
Collector
GB
18N40B
YWW
13
Gate
2
Emitter
Collector
GB18N40B = NGB18N40CLB
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NGB18N40CLBT4 D2PAK 800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
March, 2005 Rev. 1
1
Publication Order Number:
NGB18N40CLB/D







NGB18N40CLBT4 pdf, 数据表
100
Duty Cycle = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
NGB18N40CLBT4
0.1
0.01
Single Pulse
0.001
0.0001
0.00001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RqJA(t)
RqJC @ R(t) for t 0.2 s
0.0001
0.001
t,TIME (S)
0.01
Figure 19. Transient Thermal Resistance
(Nonnormalized JunctiontoAmbient mounted on
minimum pad area)
0.1
1
http://onsemi.com
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