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PDF ( 数据手册 , 数据表 ) NX26F011A

零件编号 NX26F011A
描述 (NX26F011A / NX26F041A) 1M-BIT AND 4M-BIT SERIAL FLASH MEMORY
制造商 NexFlash
LOGO NexFlash LOGO 


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NX26F011A 数据手册, 描述, 功能
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NX26F011A
NNXX262F064F1A011A
NX26F041A
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY
WITH 2-PIN NXS INTERFACE
1PRE-RELEASE
MAY 1999
FEATURES
• Tailored for Portable and Mobile Media-Storage
– Ideal for portable/mobile applications that transfer
and store data, audio, or images
– Removable Serial Flash Module package option
NexFlash ™ Non-volatile Memory Technology
– Patented Single-Transistor EEPROM Cell
– High-density, cost-effective, low-voltage/power
– 10K/100K endurance, ten years data retention
• Flash Memory for Battery-Operation
– Single 5V or 3V supply for Read, Erase/Write
– Icc 5 mA active with 1 µA standby power
– 5 ms Erase/Write times for efficient battery use
2
• 1M-bits or 4M-bits of NexFlash Serial Memory
– 512 or 2,048 sectors of 264 bytes each
– Simple commands: Reset, Read, Write,
Ready/Busy
– No pre-erase required, auto-erases before write
• Two-pin NXS Serial Interface
– Saves Microcontroller-pins, simplifies PCB layout,
low switching noise compared to parallel Flash
– Supports clock operation as fast as 16 MHz
– Multi-device cascading, up to 16 devices
3
4
5
• Development Tools and Accessories
– SFK-NXS Serial Flash Development Kit
6
7
Description
The NexFlashNX26F011A and NX26F041A Serial Flash
Memories are tailored for portable/mobile media-storage
applications that transfer and store data, audio and images.
Manufactured using NexFlashs patented single transistor
EEPROM memory cell, the NX26F011A and NX26F041A
provide a high-density, low-voltage, low-power, and cost
effective solution for battery-operated nonvolatile data
storage requirements. The NX26F011A and NX26F041A
can operate with a single 5V or 3V supply for Read, Write,
and Erase. Power consumption is very low due to µA
standby current and fast Erase/Write performance (as fast
as 5 ms per sector) that minimizes power-on time, resulting
in a highly efficient energy-per-transfer ratio. The NX26F011A
8
9and NX26F041A offer 1M-bits and 4M-bits of Flash memory
organized in sectors of 264 bytes each. Each sector is
individually addressable through basic commands or
control functions such as Reset, Read, Erase/Write, and
10Ready/Busy. The NXS (NexFlash Serial) 2-wire serial
interface is ideal for use with microcontrollers since it only
requires two pins. This leaves pins normally used for parallel
Flash free for other uses. The NXS interface supports clock
11ratesasfastas16MHzandallowsformulti-device cascading
of up to 16 devices. It also simplifies PC-board layout and
generates less transient noise than parallel devices. Devel-
opment is supported with the NexFlash Serial Flash
Development Kit.
12
This document contains PRELIMINARY INFORMATION. NexFlash reserves the right to make changes to its product at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 1998, NexFlash Technologies, Inc.
NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©
1







NX26F011A pdf, 数据表
NX26F011A
NX26F041A
SCK
SIO
Device leaves standby mode at this edge
0 0 0 1 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 DA3 DA2 DA1 DA0 A15 A14 A13 A12
Read
Command
12-Bit Sector Address
Device
Address
Aux.
Address
SCK
SIO
SCK
SIO
SCK
SIO
MSB
LSB
Four Reserved Bytes (Use 00 00 00 00H)
tRP
1 00 1 10 0 1
1
0 0 1 1 0 01
Status Word (S15-S0): Ready: 9999H or Busy:6666H
Device Drives SIO Line
Float SIO so data direction can change from device input to output
2112 Clocks
8 Clocks
tRESET
Bytes 0 to 262
Bytes 0 to 263
Device Releases SIO Line
Figure 9. Read Instruction Sequence Clocking
8 NexFlash Technologies, Inc.
PRELIMINARY NXSF009A-0599
05/05/99 ©














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