|
|
零件编号 | GA150TD120U | ||
描述 | HALF-BRIDGE IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
www.DataSheet4U.com
PRELIMINARY
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
• Generation 4 IGBT technology
• Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 5.067A
GA150TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 150A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
150
300
300
300
±20
2500
780
406
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.16
0.20
—
4.0
3.0
—
Units
°C/W
N. m
g
1
3/20/98
GA150TD120U
+Vge
90% Vge
Vce
Ic 10% Vce
td (o ff)
90% Ic
Ic
5% Ic
tf
t1 +5 µ S
∫Eoff = VVcceeicIcdtdt
t1
Fig. 17 - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,
td(off), tf
10% +Vg
GATE VO LTAG E D.U.T.
+Vg
10% Ic
Vcc
Vce
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
∫E onV=ceVVtIc2cceeideItcdt dt
t1
t2
Fig. 19 - Test Waveforms for Circuit of Fig. 17,
Defining Eon, td(on), tr
8
Ic
tx
10% Vcc
Vpk
Irr
trr
trr
∫Q rr =Ic ditIdcddt t
tx
10% Irr
Vcc
DIODE RECOVERY
W AVEFORMS
DIO DE REVERSE
RECOVERY ENERGY
t3
∫E rec V= d VIVctd4ddidItcdt dt
t3
t4
Fig. 20 - Test Waveforms for Circuit of Fig. 17,
Defining Erec, trr, Qrr, Irr
www.irf.com
|
|||
页数 | 10 页 | ||
下载 | [ GA150TD120U.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
GA150TD120K | Short Circuit Rated Ultra-Fast tm Speed IGBT | XIAN |
GA150TD120U | HALF-BRIDGE IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT | International Rectifier |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |