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PDF ( 数据手册 , 数据表 ) IR1166SPbF

零件编号 IR1166SPbF
描述 SmartRectifier CONTROL IC
制造商 International Rectifier
LOGO International Rectifier LOGO 


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IR1166SPbF 数据手册, 描述, 功能
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Data Sheet PD-97237
IR1166SPbF
SmartRectifierTM CONTROL IC
Features
• Secondary side high speed SR controller
• DCM, CrCM and CCM flyback topologies
• 200V proprietary IC technology
• Max 500KHz switching frequency
• Anti-bounce logic and UVLO protection
• 4A peak turn off drive current
• Micropower start-up & ultra low quiescent current
• 10.7V gate drive clamp
• 50ns turn-off propagation delay
• Vcc range from 11.3V to 20V
• Direct sensing of MOSFET drain voltage
• Minimal component count
• Simple design
• Lead-free
• Compatible with 1W Standby, Energy Star, CECP, etc.
Description
Package
IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs
used as synchronous rectifiers in isolated Flyback converters.
The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky
diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity
of the current and turn the power switch on and off in proximity of the zero current transi-
tion.
Ruggedness and noise immunity are accomplished using an advanced blanking scheme
and double-pulse suppression which allow reliable operation in continuous, discontinuous
8-Lead SOIC
and critical current mode operation and both fixed and variable frequency modes.
IR1166S Application Diagram
Vin
Rs
Cs
Ci
Rdc
XFM
U1
Cdc
1 VCC VGATE 8
2 OVT GND 7
3 MOT
VS 6
RMOT
4 EN
VD 5
IR1166S
Rg
Co
Rtn Q1
*Please note that this data sheet contains advanced information that could change before the product is released to production.
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IR1166SPbF pdf, 数据表
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IR1166S
cycle of the SR MOSFET and, as a consequence, the
max duty cycle of the primary side switch.
DCM/CrCM Turn-off phase
Once the SR MOSFET has been turned on, it will
remain on until the rectified current will decay to the
level where VDS will cross the turn-off threshold VTH1.
This will happen differently depending on the mode
of operation.
In DCM the current will cross the threshold with a
relatively low dI/dt. Once the threshold is crossed, the
current will start flowing again through the body diode,
IPRIM
is blanked for a certain amount of time (TBLANK) after
VTH1 has been triggered.
The blanking time is internally set. As soon as VDS
crosses the positive threshold VTH3 also the blanking
time is terminated and the IC is ready for next
conduction cycle.
CCM Turn-off phase
In CCM mode the turn off transition is much steeper
and dI/dt involved is much higher. The turn on phase
is identical to DCM or CrCM and therefore won’t be
repeated here.
During the SR FET conduction phase the current will
decay linearly, and so will VDS on the SR FET.
VPRIM
IPRIM
T1
ISEC
VSEC
T2 T3
time
time
Primary and secondary currents and
voltages for DCM mode
IPRIM
VPRIM
ISEC
VSEC
T1
T2
time
time
Primary and secondary currents and
voltages for CrCM mode
causing the VDS voltage to jump negative. Depending
on the amount of residual current, VDS may trigger
once again the turn on threshold: for this reason VTH2
VPRIM
ISEC
VSEC
T1
T2
time
time
Primary and secondary currents and
voltages for CCM mode
Once the primary switch will start to turn back on, the
SR FET current will rapidly decrease crossing VTH1
and turning the gate off.
The turn off speed is critical to avoid cross conduction
on the primary side and reduce switching losses.
also in this case a blanking period will be applied, but
given the very fast nature of this transition, it will be
reset as soon as VDS crosses VTH3.
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