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PDF ( 数据手册 , 数据表 ) STP11NM60

零件编号 STP11NM60
描述 N-CHANNEL Power MOSFET
制造商 ST Microelectronics
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STP11NM60 数据手册, 描述, 功能
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4- 11A TO-220/FP/D2PAK/I2PAK
MDmesh™ Power MOSFET
General features
Type
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
VDSS
(@TJ=TJmax)
650V
650V
650V
650V
RDS(on)
<0.45
<0.45
<0.45
<0.45
ID
11A
11A
11A
11A
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
i2PAK
123
Internal schematic diagram
Order codes
Part number
STB11NM60T4
STB11NM60-1
STP11NM60
STP11NM60FP
Marking
B11NM60
B11NM60-1
P11NM60
P11NM60FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
January 2007
Rev 6
1/16
www.st.com
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STP11NM60 pdf, 数据表
Electrical characteristics
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
Figure 13. Source-drain diode forward
characteristics
8/16







STP11NM60 equivalent, schematic
STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1
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