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PDF ( 数据手册 , 数据表 ) FGA180N30D

零件编号 FGA180N30D
描述 300V PDP IGBT
制造商 Fairchild Semiconductor
LOGO Fairchild Semiconductor LOGO 


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FGA180N30D 数据手册, 描述, 功能
www.DataSheet4U.com
June 2006
FGA180N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides
low conduction and switching loss. FGA180N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
GCE
TO-3P
Absolute Maximum Rating TC = 25oC unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA180N30D
300
± 30
180
450
10
40
480
192
-55 to +150
300
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
1.56
40
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA180N30D Rev. A
1
www.fairchildsemi.com







FGA180N30D pdf, 数据表
TO-3PCapacitance CharacteristicsTurn-On Characteristics vs. Gate
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
1.40 ±0.20
0.60
+0.15
–0.05
FGA180N30D Rev. A
Dimensions in Millimeters
8 www.fairchildsemi.com














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