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零件编号 | FGA120N30D | ||
描述 | 300V PDP IGBT | ||
制造商 | Fairchild Semiconductor | ||
LOGO | |||
1 Page
www.DataSheet4U.com
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G
E
FGA120N30D
300
± 30
120
300
10
40
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.43
1.56
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA120N30D Rev. A
1
www.fairchildsemi.com
Mechanical Dimensions
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
TO-3P
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
1.40 ±0.20
0.60
+0.15
–0.05
FGA120N30D Rev. A
8
www.fairchildsemi.com
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页数 | 9 页 | ||
下载 | [ FGA120N30D.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
FGA120N30D | 300V PDP IGBT | Fairchild Semiconductor |
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