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零件编号 | RN1311 | ||
描述 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | ||
制造商 | Toshiba Semiconductor | ||
LOGO | |||
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RN1310,RN1311
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1310,RN1311
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2310, RN2311
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
JEDEC
―
EIAJ
SC-70
Unit TOSHIBA
2-2E1A
Weight: 0.006g
V
50 V
5V
100 mA
100 mW
150 °C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1310
RN1311
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
― VCB = 50V, IE = 0
― VEB = 5V, IC = 0
― VCE = 5V, IC = 1mA
― IC = 5mA, IB = 0.25mA
― VCE = 10V, IC = 5mA
― VCB = 10V, IE = 0, f = 1MHz
R1 ―
―
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
120 ― 700 ―
― 0.1 0.3 V
― 250 ― MHz
―3
6 pF
3.29 4.7 6.11
kΩ
7 10 13
1 2001-06-07
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页数 | 5 页 | ||
下载 | [ RN1311.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
RN1310 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
RN1311 | (RN1310 / RN1311) TOSHIBA Transistor Silicon NPN Epitaxial Type | Toshiba Semiconductor |
RN1312 | (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
RN1313 | (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications | Toshiba Semiconductor |
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