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PDF ( 数据手册 , 数据表 ) MW4IC2230MBR1

零件编号 MW4IC2230MBR1
描述 RF LDMOS Wideband Integrated Power Amplifiers
制造商 Motorola Semiconductors
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MW4IC2230MBR1 数据手册, 描述, 功能
www.DataSheet4U.com
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW4IC2230/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi - stage structure. Its wideband
On - Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
VRD1
VRG1
VDS2
VDS1
RFin
VGS1
VGS2
VGS3
3 Stages IC
Quiescent Current
Temperature Compensation
Functional Block Diagram
VDS3/RFout
PIN CONNECTIONS
GND
VDS2
VRD1
VRG1
VDS1
RFin
VGS1
VGS2
VGS3
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15
VDS3/
14 RFout
13
12 GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
1







MW4IC2230MBR1 pdf, 数据表
www.DataSheet4U.com
Freescale Semiconductor, Inc.
Zload*
f = 2230 MHz
Zin*
f = 2050 MHz
f = 2050 MHz
Zo = 50
f = 2230 MHz
VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA, Pout = 26 dBm
f
MHz
Zin
Zload
2050
42.18 + j1.49
8.52 - j0.46
2110
41.06 - j1.30
8.58 - j0.20
2140
40.49 - j2.42
8.63 - j0.09
2170
40.05 - j3.45
8.69 - j0.01
2230
39.29 - j6.31
8.81 + j0.04
Zin = Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Device
Under
Test
Output
Matching
Network
Z in Z load
Figure 10. Series Equivalent Input and Load Impedance
MW4IC2230MBR1 MW4IC2230GMBR1
MOTOROLA RF DEVICE DATA
8
For More Information On This Product,
Go to: www.freescale.com














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