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PDF ( 数据手册 , 数据表 ) MW4IC2020GMBR1

零件编号 MW4IC2020GMBR1
描述 RF LDMOS Wideband Integrated Power Amplifiers
制造商 Motorola Semiconductors
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MW4IC2020GMBR1 数据手册, 描述, 功能
www.DataSheet4U.com
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW4IC2020/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
MW4IC2020MBR1
MW4IC2020GMBR1
The MW4IC2020M wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1600 to 2400 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA,
CDMA and W - CDMA.
Final Application
Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 =
240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 97
Pilot, Sync, Paging, Traffic Codes 8 through 13
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1805 - 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
PIN CONNECTIONS
VRD1
VRG1
VDS2
VDS1
RFin
VGS1
VGS2
VGS3
3 Stages IC
Quiescent Current
Temperature Compensation
VDS3/RFout
GND
VDS2
VRD1
VRG1
VDS1
RFin
VGS1
VGS2
VGS3
GND
1
2
3
16
15
4
5
6 14
7
8
9
10 13
11 12
(Top View)
GND
VDS3/
RFout
GND
Functional Block Diagram
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 4
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1
For More Information On This Product,
Go to: www.freescale.com
1







MW4IC2020GMBR1 pdf, 数据表
www.DataSheet4U.com
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
1.E+09
1.E+08
1.E+07
1.E+06
3rd Stage
2nd Stage
1st Stage
1.E+05
1.E+04
90 100 110 120 130 140 150 160 170 180 190
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
8
For More Information On This Product,
Go to: www.freescale.com














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