|
|
零件编号 | 2SK1093 | ||
描述 | Silicon N-Channel MOS FET | ||
制造商 | Hitachi Semiconductor | ||
LOGO | |||
1 Page
www.DataSheet4U.com
2SK1093
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TO–220FM
2
1
3
12 3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID 10 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
40
A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR
10 A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at TC = 25 °C
DataSheet4 U .com
|
|||
页数 | 3 页 | ||
下载 | [ 2SK1093.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
2SK1093 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1094 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1095 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1096-MR | N-CHANNEL SILICON POWER MOSFET | Fuji Electric |
零件编号 | 描述 | 制造商 |
STK15C88 | 256-Kbit (32 K x 8) PowerStore nvSRAM | Cypress Semiconductor |
NJM4556 | DUAL HIGH CURRENT OPERATIONAL AMPLIFIER | New Japan Radio |
EL1118-G | 5 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
DataSheet8.cn | 2020 | 联系我们 | 搜索 | Simemap |