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PDF ( 数据手册 , 数据表 ) HA-5002

零件编号 HA-5002
描述 110MHz/ High Slew Rate/ High Output Current Buffer
制造商 Intersil Corporation
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HA-5002 数据手册, 描述, 功能
Data Sheet
HA-5002
November 1998 File Number 2921.4
110MHz, High Slew Rate, High Output
Current Buffer
The HA-5002 is a monolithic, wideband, high slew rate, high
output current, buffer amplifier.
Utilizing the advantages of the Intersil D.I. technologies, the
HA-5002 current buffer offers 1300V/µs slew rate with
110MHz of bandwidth. The ±200mA output current capability
is enhanced by a 3output impedance.
The monolithic HA-5002 will replace the hybrid LH0002 with
corresponding performance increases. These characteristics
range from the 3000kinput impedance to the increased
output voltage swing. Monolithic design technologies have
allowed a more precise buffer to be developed with more than
an order of magnitude smaller gain error.
The HA-5002 will provide many present hybrid users with a
higher degree of reliability and at the same time increase
overall circuit performance.
For the military grade product, refer to the HA-5002/883
datasheet, AnswerFAX document #3705.
Features
• Voltage Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.995
• High Input Impedance . . . . . . . . . . . . . . . . . . . . . 3000k
• Low Output Impedance . . . . . . . . . . . . . . . . . . . . . . . . 3
• Very High Slew Rate . . . . . . . . . . . . . . . . . . . . . 1300V/µs
• Very Wide Bandwidth . . . . . . . . . . . . . . . . . . . . . . 110MHz
• High Output Current . . . . . . . . . . . . . . . . . . . . . . . ±200mA
• Pulsed Output Current . . . . . . . . . . . . . . . . . . . . . . 400mA
• Monolithic Construction
Applications
• Line Driver
• Data Acquisition
• 110MHz Buffer
• Radar Cable Driver
• High Power Current Booster
• High Power Current Source
• Sample and Holds
• Video Products
Ordering Information
PART NUMBER TEMP.
(BRAND)
RANGE (oC)
PACKAGE
PKG. NO.
HA2-5002-2
-55 to 125 8 Pin Metal Can T8.C
HA2-5002-5
0 to 75 8 Pin Metal Can T8.C
HA3-5002-5
0 to 75 8 Ld PDIP
E8.3
HA4P5002-5
0 to 75 20 Ld PLCC
N20.35
HA7-5002-2
-55 to 125 8 Ld CERDIP F8.3A
HA7-5002-5
0 to 75 8 Ld CERDIP F8.3A
HA9P5002-5
(H50025)
0 to 75 8 Ld SOIC
M8.15
HA9P5002-9
(H50029)
-40 to 85 8 Ld SOIC
M8.15
Pinouts
HA-5002 (PDIP, CERDIP, SOIC)
TOP VIEW
V1+ 1
V2- 2
NC 3
IN 4
8 OUT
7 V2+
6 NC
5 V1-
NC 4
V2- 5
NC 6
NC 7
NC 8
HA-5002 (PLCC)
TOP VIEW
3 2 1 20 19
9 10 11 12 13
18 NC
17 V2+
16 NC
15 NC
14 NC
HA-5002 (METAL CAN)
TOP VIEW
IN
8
V1+ 1
7 V1-
V2+ 2
6 V2-
NC 3
4
OUT
5 NC
NOTE: Case Voltage = Floating
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999







HA-5002 pdf, 数据表
HA-5002
Die Characteristics
DIE DIMENSIONS:
81 mils x 80 mils x 19 mils
2050µm x 2030µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 20kÅ ±2kÅ
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
SUBSTRATE POTENTIAL (Powered Up):
V1-
TRANSISTOR COUNT:
27
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5002
V1- IN
V1+ (ALT)
V1- (ALT)
V2+
OUT
V2-
V1+
8














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