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零件编号 | IRF1104L | ||
描述 | (IRF1104L/S) HEXFET Power MOSFET | ||
制造商 | International Rectifier | ||
LOGO | |||
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l Advanced Process Technology
l Ultra Low On-Resistance
l Surface Mount (IRF1104S)
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because DofaittsaSlohweet4U.com
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
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RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
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PD -91845
IRF1104S/L
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.009Ω
ID = 100A
S
DataShee
D 2 Pak
T O -26 2
Max.
100
71
400
2.4
170
1.1
±20
350
60
17
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.9
62
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Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
11/20/98
www.DataSheet4U.com
IRF1104S/L
D2Pak Package Details
et4U.com
1.40 (.055)
MAX.
10.54 (.415)
10.29 (.405)
-A-
2
4.69 (.185)
4.20 (.165)
1.78 (.070)
1.27 (.050)
1
3X
1.40
1.14
(.055)
(.045)
5.08 (.200)
15.49 (.610)
3 14.73 (.580)
5.28 (.208)
4.78 (.188)
3X
0.93 (.037)
0.69 (.027)
0.25 (.010) M B A M
0.55 (.022)
0.46 (.018)
-B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
DataShee
8.89 (.350)
REF.
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.450)
NOTES:
1 D IM E N S IO N S A F T E R S O LD E R D IP .
LE A D A S S IG NM E N TS
DataSheet4U.1c-oGmA T E
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
2 - D RA IN
3 - SOURCE
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
8.89 (.350)
3.81 (.150)
2.08 (.082)
2X
17.78 (.700)
2.54 (.100)
2X
Part Marking
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8
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INTERNATIO NAL
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE
F530S
9246
9B 1M
A
PART NUMBER
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
www.irf.com
DataSheet4U.com
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页数 | 10 页 | ||
下载 | [ IRF1104L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRF1104 | Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A) | International Rectifier |
IRF1104L | (IRF1104L/S) HEXFET Power MOSFET | International Rectifier |
IRF1104LPBF | (IRF1104S/LPBF) HEXFET Power MOSFET | International Rectifier |
IRF1104S | (IRF1104L/S) HEXFET Power MOSFET | International Rectifier |
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