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PDF ( 数据手册 , 数据表 ) FP1189

零件编号 FP1189
描述 HFET
制造商 WJ Communications
LOGO WJ Communications LOGO 


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FP1189 数据手册, 描述, 功能
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FP1189
½-Watt HFET
The Communications Edge TM
Product Information
Product Features
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
MTTF >100 Years
SOT-89 SMT Package
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
Functional Diagram
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a
drain bias of +8 V and 125 mA to achieve +40 dBm
output IP3 performance and an output power of +27
dBm at 1-dB compression, while providing 20.5 dB
gain at 900 MHz.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP1189 has an associated MTTF
of greater than 100 years at a mounting temperature
of 85°C. All devices are 100% RF & DC tested.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high efficiency are required.
Specifications
Typical Performance
DC Parameter
Saturated Drain Current, Idss (1)
Transconductance, Gm
Pinch Off Voltage, Vp (2)
Thermal Resistance
Junction Temperature (3)
RF Parameter (4)
Frequency Range
Small Signal Gain
SS Gain (50 , unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 (5)
Noise Figure
Units
mA
mS
V
°C / W
°C
Min
220
Units
MHz
dB
dB
dB
dBm
dBm
dB
Min
50
17
Typ Max Parameter (6) Units
Typical
290 360
Frequency
MHz 915 1960 2140
155DataSheet4U.cSo21m
dB 20.6 15.7 14.7
-2.1 S11
dB -13 -26 -24
68 S22
160 Output P1dB
dB -6.0 -9.6 -9.0
dBm +27.4 +27.2 +27.2
Output IP3
dBm +39.9 +40.4 +39.7
Typ Max
Noise Figure
dB 2.7 3.7 4.3
900 4000
20.5
21
24
Channel Power (7)
@ -45 dBc ACPR
Drain Voltage
Drain Current
dBm
V
mA
+21 +20.8 +18.4
+8
125
+27.4
+40
6. Typical parameters represent performance in an application circuit.
7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
2.7
DataShee
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 1.2 mA.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
4. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in
a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, Vdg
DataSheet4UJu.cncotmion Temperature
Rating
-40 to +85 °C
-55 to +125 °C
2.0 W
6 dB above Input P1dB
+14 V
+220° C
Operation of this device above any of these parameters may cause permanent damage.
Part No.
FP1189
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
Description
½ -Watt HFET
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
DataSheet4U.com
DataSheet4 U .com
June 2003







FP1189 pdf, 数据表
www.DataSheet4U.com
et4U.com
FP1189
½-Watt HFET
The Communications Edge TM
Product Information
FP1189-PCB2140S Application Circuit Performance Plots
0
-5
-10
-15
-20
-25
-30
2110
S11vs. Frequency
-40c +25c
2130 2150
Frequency (MHz)
+85c
2170
16
15
14
13
12
11
2110
S21vs. Frequency
-40c +25c
2130 2150
Frequency (MHz)
+85c
2170
0
-5
-10
-15
-20
-25
-30
2110
S22vs. Frequency
-40c +25c
2130 2150
Frequency (MHz)
+85c
2170
P1dBvs. Frequency
30
28
26
24
22
20
2110
-40C +25C +85C
2130 2150
Frequency (MHz)
2170
OIP3 vs. Temperature
42
40
38
36
34 freq=2140, 2141MHz
+12 dBm/ tone
32
-40 -15 10 35
Temperature (°C)
60
85
NoiseFigure vs. Frequency
6
5
4
3
2
1
-40c +25c +85c
0
2110 2130 2150 2170
Frequency (MHz)
DataSheet4U.com
Output Power / Gainvs. Input Power
frequency=2140MHz, Temp= +25° C
16 30
14
Gain
12
26
22
10 18
8 Output Power
14
6 10
0 4 8 12 16 20
Input Power (dBm)
ACPRvs. Channel Power
-35
3GPPW-CDMA, Test Model 1+64 DPCH, ±5MHz offset
freq=2140 MHz
-40
-45
-50
-55
-60
-65
13
-40 C
+25 C
+85 C
14 15 16 17 18 19 20 21
Output Channel Power (dBm)
OIP3 vs. Output Power
fundamental frequency= 1960, 1961MHz; Temp =+25° C
45
40
35
30
25
0 4 8 12 16 20 24
Output Power (dBm)
Output Power / Gainvs. Input Power
frequency=2140MHz, Temp= -40° C
16 30
IMDproducts vs. Output Power
fundamental frequency= 2140, 2141MHz; Temp =+25° C
-20
Output Power / Gainvs. Input Power
frequency=2140MHz, Temp= +85° C
16 30
14
Gain
12
26
-40
22
14
12 Gain
26
22
10
8
Output Power
6
0 4 8 12 16
Input Power (dBm)
18
14
10
20
-60 IMD_Low
-80
0
IMD_High
4 8 12 16 20
Output Power (dBm)
10
8
Output Power
6
24 0 4 8 12 16
Input Power (dBm)
18
14
10
20
DataShee
DataSheet4U.com
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621
e-mail: [email protected]
Web site: www.wj.com
DataSheet4U.com
DataSheet4 U .com
June 2003














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