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零件编号 | SUB60N06-18 | ||
描述 | N-Channel MOSFET | ||
制造商 | Vishay Siliconix | ||
LOGO | |||
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SUP/SUB60N06-18
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.018
ID (A)
60
TO-220AB
D
TO-263
DRAIN connected to TAB
G
GD S
Top View
SUP60N06-18
G DS
Top View
SUB60N06-18
S
N-Channel MOSFET
www.DataSheet4U.comABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 100_C
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)c
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
60
"20
60
39
120
60
180
120b
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
RthJA
Junction-to-Case
RthJC
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70290
S–57253—Rev. D, 24-Feb-98
Limit
40
62.5
1.25
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
www.DataSheet4U.com
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页数 | 4 页 | ||
下载 | [ SUB60N06-18.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
SUB60N06-18 | N-Channel MOSFET | Vishay Siliconix |
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