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PDF ( 数据手册 , 数据表 ) STP6NK60Z

零件编号 STP6NK60Z
描述 N-CHANNEL MOSFET
制造商 ST Microelectronics
LOGO ST Microelectronics LOGO 


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STP6NK60Z 数据手册, 描述, 功能
STB6NK60Z - STB6NK60Z-1
STP6NK60ZFP - STP6NK60Z
N-channel 600 V - 1 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ Power MOSFET
Features
Type
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
VDSS
600 V
600 V
600 V
600 V
RDS(on) ID
PW
< 1.2 6 A 110 W
< 1.2 6 A 110 W
< 1.2 6 A 30 W
< 1.2 6 A 110 W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
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3
2
1
TO-220
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB6NK60Z
B6NK60Z
STB6NK60Z-1
B6NK60Z
STP6NK60ZFP
P6NK60ZFP
STP6NK60Z
P6NK60Z
Package
D²PAK
I²PAK
TO-220FP
TO-220
November 2007
Rev 8
Packaging
Tape & reel
Tube
Tube
Tube
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STP6NK60Z pdf, 数据表
Electrical characteristics
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
Figure 16. Maximum avalanche energy vs
temperature
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