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零件编号 | STP6NK60Z | ||
描述 | N-CHANNEL MOSFET | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
STB6NK60Z - STB6NK60Z-1
STP6NK60ZFP - STP6NK60Z
N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESH™ Power MOSFET
Features
Type
STB6NK60Z
STB6NK60Z-1
STP6NK60ZFP
STP6NK60Z
VDSS
600 V
600 V
600 V
600 V
RDS(on) ID
PW
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 110 W
< 1.2 Ω 6 A 30 W
< 1.2 Ω 6 A 110 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
www.DataSheet4U.com
3
2
1
TO-220
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB6NK60Z
B6NK60Z
STB6NK60Z-1
B6NK60Z
STP6NK60ZFP
P6NK60ZFP
STP6NK60Z
P6NK60Z
Package
D²PAK
I²PAK
TO-220FP
TO-220
November 2007
Rev 8
Packaging
Tape & reel
Tube
Tube
Tube
1/17
www.st.com
17
Electrical characteristics
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
Figure 16. Maximum avalanche energy vs
temperature
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页数 | 15 页 | ||
下载 | [ STP6NK60Z.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STP6NK60Z | N-CHANNEL MOSFET | ST Microelectronics |
STP6NK60ZFP | N-CHANNEL MOSFET | ST Microelectronics |
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