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PDF ( 数据手册 , 数据表 ) STQ2016-3

零件编号 STQ2016-3
描述 700-2500 MHz Direct Quadrature Modulator
制造商 ETC
LOGO ETC LOGO 


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STQ2016-3 数据手册, 描述, 功能
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Product Description
The Sirenza Microdevices STQ-2016-3 is a direct quadrature
modulator targeted for use in W-CDMA applications. This
device features a 700-2500 MHz operating frequency band,
excellent carrier and sideband suppression, and a low broad-
band noise floor.
STQ-2016-3
STQ-2016-3Z Pb RoHS Compliant
& Green Package
700-2500 MHz Direct Quadrature Modulator
The STQ-2016-3 uses silicon germanium (SiGe) device
technology and delivers a typical channel power of -11 dBm
with adjacent channel power less than -65 dBc. A digital
input shut-down feature is included that, when enabled,
attenuates the output by 60 dB. The device is packaged in an
industry standard 16 pin TSSOP with exposed paddle for
superb RF and thermal ground. The STQ-2016-3Z is pack-
aged in a RoHs compliant and Green 16-pin TSSOP with
matte tin finish.
Functional Block Diagram
BBQP 1
16 BBQN
VCC 2
15 VCC
VEE 3
14 VEE
LOP 4
LON 5
LO
QUADRATURE
GENERATOR
13 RFP
12 RFN
VEE 6
11 VEE
16 pin TSSOP with Exposed Ground Pad
Package Footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm)
Package Height: 0.039 inches (1.0 mm)
Product Features
Excellent carrier feedthrough, -40 dBm constant
with output power
+4.0 dBm output P1dB
Wide baseband input, DC - 500 MHz
Superb phase accuracy and amplitude balance,
±0.5 deg./±0.2 dB
Very low noise floor, -157 dBm/Hz
Low ACP, -65 dBc
SD 7
BBIP 8
10 VCC
9 BBIN
Applications
W-CDMA Transmitters
Product Specifications – W-CDMA Modulation (See Table 1 for Test Conditions)
869-894 MHz
1930-1990 MHz
Parameters
Comments
Unit Min. Typ. Max. Min. Typ. Max.
Channel Power
Guaranteed through
Output Power test as
specified on Page 2
dBm
-13 -11
-9 -14.5 -12.5 -10.5
Power Flatness
Range across fre-
quency band
dB
0.25 0.5
0.25 0.5
Adjacent Channel Power
Guaranteed through
IM3 test as specified
on Page 2
dBc
-65 -63
-65 -63
First Alternate Channel
Power
dBc
-75 -68
-73 -68
Second Alternate Channel
Power
dBc
-75 -68
-73 -68
Broadband Noise Floor
60 MHz offset from
carrier
dBm/Hz
-157 -156
-157 -156
Signal-to-Noise Ratio
Noise Offset: 60 MHz,
Measured in a 3.84 MHz
bandwidth
dB
79 81
77 79
2110-2170 MHz
Min. Typ. Max. Type*
-15 -13 -11
E
0.25 0.5 C,D
-65 -63 E
-73 -68 C,D
-73 -68 C,D
-156 -155 C,D
76 78
C,D
*Type Definition: A = 100% tested (see Table 2 for conditions), B = Sample tested, C = Characterized on samples over temperature
and Vcc, D = Design parameter, E = 100% tested through correlated CW parameter, I = Device input specification.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice.
No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in
life-support devices and/or systems.
www.DataSheet4U.comCopyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-104229 Rev B







STQ2016-3 pdf, 数据表
www.DataSheet4U.com
Typical Device Performance Graphs
Baseband Signal: W-CDMA Test Model 1 w/ 64 DPCH,
Peak-to-Average Ratio = 10.54
15101
152
12
154
13
156
14
158
15 6
50
4 20 2 4
25 0LO Drive Le2v5el (dBm)
I/Q Drive = 1 Vpp,TDemifpf.erature (Deg. C)
II//QQ DDrriivvee == 21.V5pVpp, Dp,ifDf.iff.
II//QQ DDrriivvee == 31.V7pVpp, Dp,ifDf.iff.
II//QQ DDrriivvee == 41.V9pVpp, Dp,ifDf.iff.
50
6
75
8
100
Figure 19. Channel Power Vs. Temperature, LO
Drive = +4.0 dBm @ 2140 MHz.
STQ-2016-3 Direct Quadrature Modulator
10
11
12
13
14
15
16
1
1.2 1.4 1.6 1.8
IQ Drive Level (Vpp, Diff.)
Temp. = -40 Deg. C
Temp. = +25 Deg. C
Temp. = +85 Deg. C
Figure 20. Channel Power Vs. I/Q Drive Level, over
Temperature Range, LO Drive = +4.0 dBm @ 2140 MHz.
2
Adjacent Channel Power
45 45
50 50
55
60
65
70
6
4 20 2
LO Drive Level (d Bm)
I/Q Drive = 1 V pp, Diff.
I/Q Drive = 2 V pp, Diff.
I/Q Drive = 3 V pp, Diff.
I/Q Drive = 4 V pp, Diff.
4
Figure 21. Adjacent Channel Power Vs. LO
Drive Level, LO Frequency = 2140 MHz.
6
8
55
60
65
70
1
1.5 2 2.5 3
IQ Drive Level (Vpp, D iff.)
LO D rive = -5 dBm
LO D rive = -2 dBm
LO D rive = -1 dBm
LO D rive = +4 dBm
LO D rive = +7 dBm
3.5
Figure 22. Adjacent Channel Power Vs. I/Q Drive
Level, LO Frequency = 2140 MHz.
4
45 45
50 50
55 55
60
60
65
65
70
21 00
21 20
21 40
LO Frequency (MHz)
I/Q Drive = 1 V pp, Diff.
I/Q Drive = 2 V pp, Diff.
I/Q Drive = 3 V pp, Diff.
I/Q Drive = 4 V pp, Diff.
21 60
21 80
70
1 1.5 2 2.5 3 3.5 4
IQ Drive Level (Vpp, Diff.)
LO Fre q. = 2110 MHz
LO Fre q. = 2140 MHz
LO Fre q. = 2170 MHz
Figure 23. Adjacent Channel Power Vs. LO Frequency, LO Drive
Figure 24. Adjacent Channel Power Vs. I/Q Drive Level, over LO
= +4.0 dBm.
Frequency Range, LO Drive = +4.0 dBm.
www.D303aSt.aTeSchhnoeloegytC4oUurt,.Bcrooommfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
8 EDS-104229 Rev B







STQ2016-3 equivalent, schematic
www.DataSheet4U.com
STQ-2016-3 Direct Quadrature Modulator
Figure 51. Measurement System for Modulation Performance Tests: Channel Power, Adjacent Channel Power, First Alternate Channel
Power, Second Alternate Channel Power, and Broadband Noise Floor.
Band-Pass Filter
BW= 35 MHz
Fc =2140MHz
LO
Sirenza
STQ-2016-3
Band-Pass Filter
BW= 90 MHz
Fc =2080MHz
RFout
Amplifier
+28 dBGain
Agilent E4437B
Signal Generator
Telonic
1500-5-5EE
NoiseTest Only
Low-Pass
Filters
Fc =1.9MHz
II
QQ
K&LTF327-1
Mini-Circuits
ZHL-1042J
Mini-
Circuits
SLP-1.9
NoiseTest Only
Rhode &Schwarz
FSIQ7 Spectrum
Analyzer
I I QQ
Rhode &Schwarz
AMIQI/QModulation
Generator
Figure 52. Measurement System for Continuous Wave Performance Tests: Output Power, P1dB, Carrier Feedthrough, Sideband
Suppresion, and IM3 Suppression.
499 2K
50 5.11K
10K
5.11K
200kHz sine
145mV amplitude
0 degree phase
0
90
200kHz sine
145mV amplitude
+90 degree phase
24.9
BBI
BBQ
VCC
VCC 1K
499
499
AD8138
+
VOCM
-
2K
-4dBm
LO
2K
50 600mV p-p differential
DC levels for BBIN, BBIP, BBQN,
BBQP are 1.9V nominal. The offset
50 required to null carrier feedthrough
is typically <20mV.
STQ-x016
BBI+
LO
Match
BBI-
LO+
LO-
BBQ+
0
90
RF+ RF
RF- Match
RF out
BBQ-
50 5.11K
- for intermodulation tests,
synthesizer set for
200kHz and 220kHz sine
outputs on I and Q
channels
10K
5.11K
24.9
VCC
VCC 1K
499
AD8138
+
VOCM
-
2K
50 +5V
50 600mV p-p differential
www.D303aSt.aTeSchhnoeloegytC4oUurt,.Bcrooommfield, CO 80021
Phone: (800) SMI-MMIC
16
http://www.sirenza.com
EDS-104229 Rev B










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