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零件编号 | PN150 | ||
描述 | Silicon planar type For optical control systems | ||
制造商 | Panasonic Semiconductor | ||
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Phototransistors
PNZ150 (PN150)
Silicon planar type
For optical control systems
■ Features
• High sensitivity
• Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
• Low dark current
• Side-view plastic mold type package
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-emitter voltage (Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
IC
PC
Topr
Tstg
20
20
100
−25 to +85
−30 to +100
Unit
V
mA
mW
°C
°C
φ3.5±0.2
4.5±0.3
Unit: mm
4.2±0.3
(2.3) (1.9)
2-0.98±0.2
2-0.45±0.15
0.45±0.15
(2.54)
(R1.75)
(1.2)
12
1: Emitter
2: Collector
LSTLR102-003 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Photocurrent *1
ICE(L) VCE = 10 V, L = 500 lx
1.0 3.0
Dark current
ICEO VCE = 10 V
0.01 1.00
Peak emission wavelength
Half-power angle
λp VCE = 10 V
θ The angle from which photocurrent
800
35
becomes 50%
Rise time *2
Fall time *2
Collector-emitter saturation voltage *1
tr
tf
VCE(sat)
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
ICE(L) = 1 mA, L = 1 000 lx
4
4
0.2 0.5
Unit
mA
µA
nm
°
µs
µs
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be dis regarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
www.D5a0 ΩtaSheet4U.RcLoSimg. out (Output pulse) tr
90%
10%
tf
tr: Rise time
tf: Fall time
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SHE00018BED
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页数 | 3 页 | ||
下载 | [ PN150.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
PN150 | Silicon planar type For optical control systems | Panasonic Semiconductor |
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