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零件编号 | P50NE10L | ||
描述 | STP50NE10L | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
eet4U.com® STP50NE10L
Sh N - CHANNEL 100V - 0.020Ω - 50A TO-220
ata STripFET™ POWER MOSFET
w.DTYPE
VDSS
RDS(on)
w STP50NE10L
100 V <0.025 Ω
wwww.DataSheet4Us.comTYPICAL RDS(on) = 0.020 Ω
ID
50 A
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
oCHARACTERIZATION
.cDESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
USize™" strip-based process. The resulting
t4transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
etherefore a remarkable manufacturing
ereproducibility.
hAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
Ss SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
tas DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
aABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
wVDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
wID
mID
oIDM(•)
.cPtot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
t4UDerating Factor
edv/dt (1) Peak Diode Recovery voltage slope
eTstg Storage Temperature
hTj Max. Operating Junction Temperature
taS(•) Pulse width limited by safe operating area
www.DaMay 1999
Value
Unit
100 V
100 V
± 20
V
50 A
35 A
200 A
150 W
1 W/oC
6 V/ns
-65 to 175
oC
175 oC
(1) ISD ≤ 50 A, di/dt ≤ 275 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STP50NE10L
www.DataSheet4U.com
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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http://www.st.com
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页数 | 8 页 | ||
下载 | [ P50NE10L.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
P50NE10L | STP50NE10L | ST Microelectronics |
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