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PDF ( 数据手册 , 数据表 ) G4BC30UD

零件编号 G4BC30UD
描述 IRG4BC30UD
制造商 International Rectifier
LOGO International Rectifier LOGO 


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G4BC30UD 数据手册, 描述, 功能
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PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
12
92
92
12
92
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
°C/W
g (oz)
1
4/17/00







G4BC30UD pdf, 数据表
IRG4BC30UD
+Vge
90% Vge
80%
of Vce
Same type
device as
D .U .T .
430µF
D .U .T .
Ic 10% Vce
td(off)
Vce
90% Ic
Ic
5% Ic
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
10% +Vg
G ATE VO LTA G E D .U .T.
+Vg
10% Ic
Vcc
Vce
90% Ic
td(on)
5% Vce
tr
t1
DUT VOLTAGE
AND CURRENT
Ipk
Ic
t2
E on = Vce ie dt
t1
t2
Ic
tx
10% Vcc
Vpk
Irr
trr
DIO DE REVE RSE
RECOVERY ENERGY
t3
trr
Q rr = id dt
tx
10% Irr
Vcc
DIODE RECOVERY
W AVEFORMS
t4
Erec = Vd id dt
t3
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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