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PDF ( 数据手册 , 数据表 ) RD07MVS1

零件编号 RD07MVS1
描述 Silicon MOSFET Power Transistor
制造商 Mitsubishi Electric
LOGO Mitsubishi Electric LOGO 


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RD07MVS1 数据手册, 描述, 功能
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
•High power gain:
2
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
mAPPLICATION
oFor output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
t4U.cABSOLUTE MAXIMUM RATINGS
e(Tc=25°C UNLESS OTHERWISE NOTED)
eSYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
hVGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
SPin Input Power
Zg=Zl=50
taID Drain Current
-
Tj Junction Temperature
-
aTstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
.DNote 1: Above parameters are guaranteed independently.
RATINGS
30
+/- 20
50
1.5
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
wSYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
wIDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 200
wIGSS Gate to source leak current
VGS=10V, VDS=0V
- -1
UNIT
uA
uA
(0.25)
VTH
mPout1
.coηD1
Pout2
t4UηD2
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
ataSheeLoad VSWR tolerance
VDS=12V, IDS=1mA
f=175MHz , VDD=7.2V
Pin=0.3W,Idq=700mA
f=520MHz , VDD=7.2V
Pin=0.7W,Idq=750mA
VDD=9.2V,Po=7W(PinControl)
f=175MHz,Idq=700mA,Zg=50
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=7W(PinControl)
f=520MHz,Idq=750mA,Zg=50
Load VSWR=20:1(All Phase)
.DNote : Above parameters , ratings , limits and conditions are subject to change.
1.4 1.7 2.4
78 -
55 60
-
78 -
50 55
-
No destroy
No destroy
V
W
%
W
%
-
-
wwwRD07MVS1
MITSUBISHI ELECTRIC
1/8
REV.7 2 Apr. 2004







RD07MVS1 pdf, 数据表
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS1
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD07MVS1
MITSUBISHI ELECTRIC
8/8
REV.7 2 Apr. 2004














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