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PDF ( 数据手册 , 数据表 ) 12065Cxxxx

零件编号 12065Cxxxx
描述 High Voltage Chips
制造商 AVX Corporation
LOGO AVX Corporation LOGO 


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12065Cxxxx 数据手册, 描述, 功能
X7R Dielectric
General Specifications
X7R formulations are called “temperature stable” ceramics
and fall into EIA Class II materials. X7R is the most popular
of these intermediate dielectric constant materials. Its tem-
perature variation of capacitance is within ±15% from
-55°C to +125°C. This capacitance change is non-linear.
Capacitance for X7R varies under the influence of electrical
operating conditions such as voltage and frequency.
X7R dielectric chip usage covers the broad spectrum of
industrial applications where known changes in capaci-
tance due to applied voltages are acceptable.
PART NUMBER (see page 2 for complete part number expUlana.ticon)om0805
5
C 103 M
A
T
2
A
t4Size
Shee(L" x W")
Voltage
6.3V = 6
10V = Z
16V = Y
25V = 3
50V = 5
100V = 1
200V = 2
Dielectric
X7R = C
Capacitance
Code (In pF)
2 Sig. Digits +
Number of
Zeros
Capacitance
Tolerance
Preferred
J = ± 5%
K = ±10%
M = ± 20%
Failure
Rate
A = Not
Applicable
Terminations
T = Plated Ni
and Sn
7 = Gold
Plated
Packaging
2 = 7" Reel
4 = 13" Reel
7 = Bulk Cass.
9 = Bulk
Contact
Factory For
Multiples
Special
Code
A = Std.
Product
taX7R Dielectric
Typical Temperature Coefficient
10
a5
0
.D-5
-10
-15
w-20
-25
-60 -40 -20 0 20 40 60 80 100 120 140
wTemperature °C
w mVariation of Impedance with Cap Value
oImpedance vs. Frequency
.c1,000 pF vs. 10,000 pF - X7R
0805
t4U10.00
1,000 pF
10,000 pF
e1.00
Capacitance vs. Frequency
+30
+20
+10
0
-10
-20
-30
1KHz
10 KHz
100 KHz
Frequency
1 MHz
10 MHz
Insulation Resistance vs Temperature
10,000
1,000
100
0
0 20 40 60 80 100 120
Temperature °C
Variation of Impedance with Chip Size
Impedance vs. Frequency
10,000 pF - X7R
10 1206
0805
1210
1.0
Variation of Impedance with Chip Size
Impedance vs. Frequency
100,000 pF - X7R
10
1206
0805
1210
1.0
She0.10 0.1 0.1
ata0.01
.D10
100
Frequency, MHz
1000
.01
1
10 100
Frequency, MHz
1,000
.01
1
10 100
Frequency, MHz
1,000
www 11







12065Cxxxx pdf, 数据表
Embossed Carrier Configuration
8 & 12mm Tape Only
T2
T DEFORMATION
BETWEEN
EMBOSSMENTS
D0
P0
P2
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE
±0.2mm (±0.008)
EMBOSSMENT
E1
TOP COVER
B1 K0 TAPE
A0
B0
FW
E2
S1 T1
CENTER LINES
OF CAVITY
P1
MAX. CAVITY
SIZE - SEE NOTE 1
D1 FOR COMPONENTS
2.00 mm x 1.20 mm AND
LARGER (0.079 x 0.047)
B1 IS FOR TAPE READER REFERENCE ONLY
INCLUDING DRAFT CONCENTRIC AROUND B0
User Direction of Feed
8 & 12mm Embossed Tape
Metric Dimensions Will Govern
CONSTANT DIMENSIONS
Tape Size
8mm
and
12mm
D0
1.50
+0.10
-0.0
(0.059
+0.004
-0.0
)
E P0 P2
1.75 ± 0.10 4.0 ± 0.10
2.0 ± 0.05
(0.069 ± 0.004) (0.157 ± 0.004) (0.079 ± 0.002)
S1 Min.
0.60
(0.024)
T Max.
0.60
(0.024)
T1
0.10
(0.004)
Max.
VARIABLE DIMENSIONS
Tape Size B1
Max.
D1
Min.
E2
Min.
F
P1 R T2
Min.
See Note 5 See Note 2
8mm
4.35 1.00 6.25 3.50 ± 0.05 4.00 ± 0.10
25.0
(0.171) (0.039) (0.246) (0.138 ± 0.002) (0.157 ± 0.004) (0.984)
2.50 Max.
(0.098)
W
Max.
A0 B0 K0
8.30
(0.327) See Note 1
12mm
8.20 1.50 10.25 5.50 ± 0.05 4.00 ± 0.10
30.0
(0.323) (0.059) (0.404) (0.217 ± 0.002) (0.157 ± 0.004) (1.181)
6.50 Max.
(0.256)
12.3
(0.484) See Note 1
8mm
4.35 1.00 6.25 3.50 ± 0.05 2.00 ± 0.10
25.0
1/2 Pitch (0.171) (0.039) (0.246) (0.138 ± 0.002) (0.079 ± 0.004) (0.984)
2.50 Max.
(0.098)
8.30
(0.327) See Note 1
12mm
Double
Pitch
8.20 1.50 10.25 5.50 ± 0.05 8.00 ± 0.10
30.0
(0.323) (0.059) (0.404) (0.217 ± 0.002) (0.315 ± 0.004) (1.181)
6.50 Max.
(0.256)
12.3 See Note 1
(0.484)
NOTES:
1. The cavity defined by A0, B0, and K0 shall be configured to provide the following:
Surround the component with sufficient clearance such that:
a) the component does not protrude beyond the sealing plane of the cover tape.
b) the component can be removed from the cavity in a vertical direction without mechanical
restriction, after the cover tape has been removed.
c) rotation of the component is limited to 20º maximum (see Sketches D & E).
d) lateral movement of the component is restricted to 0.5mm maximum (see Sketch F).
2. Tape with or without components shall pass around radius “R” without damage.
3. Bar code labeling (if required) shall be on the side of the reel opposite the round sprocket holes.
Refer to EIA-556.
4. B1 dimension is a reference dimension for tape feeder clearance only.
5. If P1 = 2.0mm, the tape may not properly index in all tape feeders.
Top View, Sketch "F"
Component Lateral Movements
0.50mm (0.020)
Maximum
0.50mm (0.020)
Maximum
48







12065Cxxxx equivalent, schematic
General Description
I (Ideal)
I (Actual)
Loss
Angle
f
Phase
Angle
V
IR s
In practice the current leads the voltage by some other
phase angle due to the series resistance RS. The comple-
ment of this angle is called the loss angle and:
Power Factor (P.F.) = Cos
Dissipation Factor (D.F.) =
tfanorSine
for small values of the tan and sine are essentially equal
which has led to the common interchangeability of the two
terms in the industry.
Equivalent Series Resistance – The term E.S.R. or
Equivalent Series Resistance combines all losses both
series and parallel in a capacitor at a given frequency so
that the equivalent circuit is reduced to a simple R-C series
connection.
E.S.R.
C
Dissipation Factor – The DF/PF of a capacitor tells what
percent of the apparent power input will turn to heat in the
capacitor.
Dissipation Factor = E.S.R. = (2 π fC) (E.S.R.)
X
C
The watts loss are:
Watts loss = (2 π fCV2) (D.F.)
Very low values of dissipation factor are expressed as their
reciprocal for convenience. These are called the “Q” or
Quality factor of capacitors.
Parasitic Inductance – The parasitic inductance of capac-
itors is becoming more and more important in the decou-
pling of today’s high speed digital systems. The relationship
between the inductance and the ripple voltage induced on
the DC voltage line can be seen from the simple inductance
equation:
V = L di
dt
di
The dt seen in current microprocessors can be as high as
0.3 A/ns, and up to 10A/ns. At 0.3 A/ns, 100pH of parasitic
inductance can cause a voltage spike of 30mV. While this
does not sound very drastic, with the Vcc for microproces-
sors decreasing at the current rate, this can be a fairly large
percentage.
Another important, often overlooked, reason for knowing
the parasitic inductance is the calculation of the resonant
frequency. This can be important for high frequency, by-
pass capacitors, as the resonant point will give the most
signal attenuation. The resonant frequency is calculated
from the simple equation:
fres =
1
2ͱ LC
Insulation Resistance – Insulation Resistance is the
resistance measured across the terminals of a capacitor
and consists principally of the parallel resistance R P shown
in the equivalent circuit. As capacitance values and hence
the area of dielectric increases, the I.R. decreases and
hence the product (C x IR or RC) is often specified in ohm
faradsor more commonly megohm-microfarads. Leakage
current is determined by dividing the rated voltage by IR
(Ohm’s Law).
Dielectric Strength – Dielectric Strength is an expression
of the ability of a material to withstand an electrical stress.
Although dielectric strength is ordinarily expressed in volts, it
is actually dependent on the thickness of the dielectric and
thus is also more generically a function of volts/mil.
Dielectric Absorption – A capacitor does not discharge
instantaneously upon application of a short circuit, but
drains gradually after the capacitance proper has been dis-
charged. It is common practice to measure the dielectric
absorption by determining the “reappearing voltage” which
appears across a capacitor at some point in time after it has
been fully discharged under short circuit conditions.
Corona – Corona is the ionization of air or other vapors
which causes them to conduct current. It is especially
prevalent in high voltage units but can occur with low voltages
as well where high voltage gradients occur. The energy
discharged degrades the performance of the capacitor and
can in time cause catastrophic failures.
56










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