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PDF ( 数据手册 , 数据表 ) KM23V32000DTY

零件编号 KM23V32000DTY
描述 (KM23x32000xTY) 32M-Bit CMOS Mask ROM
制造商 Samsung Semiconductor
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KM23V32000DTY 数据手册, 描述, 功能
KM23V32000D(E)TY/KM23S32000D(E)TY
CMOS MASK ROM
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
GENERAL DESCRIPTION
Switchable organization
The KM23V32000D(E)TY and KM23S32000D(E)TY are fully
4,194,304x8(byte mode)
static mask programmable ROM fabricated using silicon gate
2,097,152x16(word mode)
CMOS process technology, and is organized either as
Fast access time
4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word
Random Access Time
3.3V/3.0V Operation : 100ns(Max.)
2.5V Operation : 150ns(Max.)
mode) depending on BHE voltage level.(See mode selection
table)
Supply voltage
This device operates with low power supply, and all inputs and
KM23V32000D(E)TY : single +3.0V/ single +3.3V
KM23S32000D(E)TY : single +2.5V
Current consumption
mOperating : 40mA(Max.)
Standby : 30µA(Max.)
oFully static operation
All inputs and outputs TTL compatible
.cThree state outputs
Package
-. KM23V(S)32000D(E)TY : 48-TSOP1-1218
outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V32000D(E)TY and KM23S32000D(E)TY are pack-
aged in a 48-TSOP1.
t4UFUNCTIONAL BLOCK DIAGRAM
heeA20
S.
.
ta.
.
.
a.
.
.
.DA0
A-1
wwCE
mOE
w www.DataSheet4U.coBHE
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
CONTROL
LOGIC
MEMORY CELL
MATRIX
(2,097,152x16/
4,194,304x8)
SENSE AMP.
DATA OUT
BUFFERS
...
Q0/Q8 Q7/Q15
Pin Name
A0 - A20
Q0 - Q14
Q15 /A-1
BHE
CE
OE
VCC
VSS
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power
Ground












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