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PDF ( 数据手册 , 数据表 ) LU1004D

零件编号 LU1004D
描述 High Performance N-Ch Vertical POWERJET with PN Diode
制造商 ETC
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LU1004D 数据手册, 描述, 功能
PWRLITE LU1004D
High Performance N-Ch Vertical POWERJFETTM with PN Diode
Features
™ Trench Power JFET with low threshold voltage Vth.
™ Device fully “ON” with Vgs = 0.7V
™ Optimum for “Low Side” Buck Converters
™ Optimized for Secondary Rectification in isolated DC-DC
™ Low Rg and low Cds for high speed switching
™ No “Body Diode”; extremely low Cds
™ Added Fast Recovery Schottky Diode in same package
Applications
™ DC-DC Converters
™ Synchronous Rectifiers
™ PC Motherboard Converters
™ Step-down power supplies
™ VRM Modules
IPAK Pin Assignments
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
D
G
12 3
Case TO251 (IPAK)
Pin Definitions
Pin Number Pin Name Pin Function Description
1 Gate Gate. Transistor Gate
2, 4 Drain Drain. Transistor Drain
3 Source Source. Transistor Source
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
S
N – Channel PowerJFET
with PN Diode
VDS (V)
24V
Product Summary
Rdson ()
0.0045
ID (A)
50
Symbol
VDS
VGS
VGD
ID
ID
EAS
TJ
TSTG
T
PD
Ratings
24
-10
-28
50
100
220
Units
V
V
V
A
A
mJ
-55 to 150°C
-65 to 150°C
260°C
80
°C
°C
°C
W
LU1004D- Rev 0.97 12-04












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