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零件编号 | STU10NC70Z | ||
描述 | N-Channel MOSFET | ||
制造商 | ST Microelectronics | ||
LOGO | |||
1 Page
t4U.com STU10NC70Z
ee STU10NC70ZI
Sh N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220
ta Zener-Protected PowerMESH™ III MOSFET
w.DaTYPE
w STU10NC70Z
w STU10NC70ZI
VDSS
700 V
700 V
RDS(on)
<0.75Ω
<0.75Ω
ID
9.4 A
9.4 A
s TYPICAL RDS(on) = 0.58Ω
s EXTREMELY HIGH dv/dt CAPABILITY
ms GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
os VERY LOW INTRINSIC CAPACITANCES
.cs GATE CHARGE MINIMIZED
DESCRIPTION
UThe third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
t4passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
eity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
eAPPLICATIONS
hs SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
Ss WELDING EQUIPMENT
taABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
.DaVDS
VDGR
VGS
wID
wID
wIDM (1)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
123
Max220
I-Max220
Value
STU10NC70Z STU10NC70ZI
700
700
±25
9.4 9.4(*)
5.9 5.9(*)
37.6
37.6(*)
Unit
V
V
V
A
A
A
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(q) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Sep 2000
160 55 W
m1.28
0.44
W/ °C
o±50 mA
.c4 KV
U3 V/ns
t4--
2000
V
ee–65 to 150
°C
h150 °C
taS(1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
www.Da(*)Limited only by maximum temperature allowed
1/10
STU10NC70Z/STU10NC70ZI
DIM.
A
A1
A2
b
b1
b2
c
D
D1
D2
D3
e
E
L
L1
MIN.
4.3
2.2
2.9
0.7
1.25
1.2
0.45
15.9
9
0.8
2.8
2.44
10.05
13.2
3
Max220 MECHANICAL DATA
mm
TYP.
MAX.
4.6
2.4
3.1
0.93
1.4
1.38
0.6
16.3
9.35
1.2
3.2
2.64
10.35
13.6
3.4
MIN.
0.169
0.087
0.114
0.027
0.049
0.047
0.354
0.031
0.110
0.096
0.396
0.520
0.118
D3 D2
D1
inch
TYP.
0.18
0.626
MAX.
0.181
0.094
0.122
0.036
0.055
0.054
0.023
0.641
0.368
0.047
0.126
0.104
0.407
0.535
0.133
E
8/10
D
L1
L
P011R
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页数 | 10 页 | ||
下载 | [ STU10NC70Z.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
STU10NC70Z | N-Channel MOSFET | ST Microelectronics |
STU10NC70ZI | N-Channel MOSFET | ST Microelectronics |
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