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PDF ( 数据手册 , 数据表 ) LE25FV101T

零件编号 LE25FV101T
描述 1M Serial Flash EEPROM
制造商 Sanyo Electric
LOGO Sanyo Electric LOGO 


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LE25FV101T 数据手册, 描述, 功能
omPreliminary Specifications
CMOS LSI
LE25FV101T
t4U.c1M (128k words × 8bits) Serial Flash EEPROM
taSheeFeatures
CMOS Flash EEPROM Technology
aSingle 3.3-Volt Read and Write Operations
.DSector Erase Capability: 256 Bytes per sector
wOperating Frequency: 10MHz
wLow Power Consumption
w Active Current (Read): 25 mA (Max.)
High Read/Write Reliability
Sector-write Endurance Cycles: 104
10 Years Data Retention
Self-timed Erase and Programming
Byte Programming: 35 µs (Max.)
End of Write Detection: Status Register Read
Standby Current: 20 µA (Max.)
Serial Peripheral Interface (S.P.I.) mode 0.
Hardware Data Protection
Packages Available: MSOP8(225mil)
.comProduct Description
Device Operation
The LE25FV101T is a 128K x 8 CMOS sector
Uerase, byte programmable serial Flash EEPROM.
t4The LE25FV101T is manufactured using SANYO's
proprietary, high performance CMOS Flash
eEEPROM technology. Breakthroughs in EEPROM
cell design and process architecture attain better
ereliability and manufacturability compared with
conventional approaches. The LE25FV101T erases
hand programs with a 3.3-volt only power supply.
SLE25FV101T conforms to Serial Peripheral Interface
(S.P.I.).
taFeaturing high performance programming, the
aLE25FV101T typically byte programs in 35 µs. The
LE25FV101T typically sector (256 bytes) erases in
.D4ms. Both program and erase times can be
optimized using interface feature such as Status
Register to indicate the completion of the write cycle.
wTo protect against an inadvertent write, the
LE25FV101T has on chip hardware data protection
wscheme. Designed, manufactured, and tested for a
wide spectrum of applications, the LE25FV101T is
woffered with a guaranteed sector write endurance of
Commands are used to initiate the memory
operation functions of the device. Commands are
written to the command register through serial input
(SI). The addresses and data of Commands are
latched to be used to operate functions such as
Read, Sector_Erase, Byte_Program and so on.
Fig.3 and Fig.4 contain the timing waveforms of
serial input and output. By setting CS to LOW, the
device is selected. And commands, addresses, and
dummy bits can be let in serially through SI port.
When the device is in Read or Status Register Read
mode, SO pin is in Low-impedance state. And the
requested data can be read out from MSB (most
significant bit) synchronously with the falling edge of
SCK.
WP 1
Vcc 2
8 RESET
7 Vss
104 cycles. Data retention is rated greater than 10
myears.
.coThe LE25FV101T is best suited for applications
Uthat require re-programmable nonvolatile mass
t4storage of program or data memory.
CS
SCK
3
4
6 SO
5 SI
Figure1: Pin Assignment for 8-pin MSOP
ataShee*This product incorporate technology licensed from Silicon Storage Technology, Inc.
This preliminary specification is subject to change without notice.
.DSANYO Electric Co., Ltd. Semiconductor Company
w1-1, 1 Chome, Sakata, Oizumi-machi, Ora-gun, GUNMA, 370-0596 JAPAN
wwRevision c-November 1,1999-KI/ki-1/9







LE25FV101T pdf, 数据表
Preliminary Specifications
LE25FV101T
3.3V-only 1M-Bit Serial Flash EEPROM
Figure 7: Sector_Erase Timing Diagram
CS
SCK
0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47
Self-timed Sector
Erase Cycle
t SE
SI 20H Add. Add. X D0H X
High Impedance
SO
Figure 8: Byte_Program Timing Diagram
CS
SCK
SI
SO
Self-timed Byte
Program Cycle
t BP
0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47
10H Add. Add. Add. PD X
High Impedance
SANYO Electric Co., Ltd.
8/9














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