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PDF ( 数据手册 , 数据表 ) TSAL4400

零件编号 TSAL4400
描述 GaAs/GaAlAs IR Emitting Diode
制造商 Vishay Siliconix
LOGO Vishay Siliconix LOGO 


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TSAL4400 数据手册, 描述, 功能
TSAL4400
om Vishay Telefunken
t4U.cGaAs/GaAlAs IR Emitting Diode in ø 3 mm (T–1)
ePackage
SheDescription
taTSAL4400 is a high efficiency infrared emitting diode
ain GaAlAs on GaAs technology, molded in clear, blue-
.Dgrey tinted plastic packages.
wIn comparison with the standard GaAs on GaAs
technology these emitters achieve about 100 % ra-
ww diant power improvement at a similar wavelength.
94 8488
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
mideally suitable as high performance replacements of
standard emitters.
.coFeatures
D Extra high radiant power
UD Low forward voltage
t4D Suitable for high pulse current operation
D Standard T–1 (ø 3 mm) package
eD Angle of half intensity ϕ = ± 25°
eD Peak wavelength lp = 940 nm
D High reliability
hD Good spectral matching to Si photodetectors
taSApplications
Infrared remote control units
Free air transmission systems
aInfrared source for optical counters and card readers
.DAbsolute Maximum Ratings
wTamb = 25_C
Parameter
wReverse Voltage
wForward Current
Test Conditions
Symbol
VR
IF
Value
5
100
Unit
V
mA
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81006
Rev. 3, 20-May-99
tp/T = 0.5, tp = 100 m s
omtp = 100 ms
heet4U.cxt 5sec, 2 mm from case
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
200
1.5
210
100
–55...+100
–55...+100
260
350
mA
A
mW
°C
°C
°C
°C
K/W
ataSwww.vishay.de FaxBack +1-408-970-5600
www.D 1 (5)












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