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零件编号 | IRL3303 | ||
描述 | HEXFET POWER MOSFET | ||
制造商 | International Rectifier | ||
LOGO | |||
1 Page
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1322B
IRL3303
HEXFET® Power MOSFET
D
VDSS = 30V
G RDS(on) = 0.026Ω
S ID = 38A
TO-220AB
Max.
38
27
140
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
2.2
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
IRL3303
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
4
3.78 (.14 9)
3.54 (.13 9)
-A-
6.4 7 (.25 5)
6.1 0 (.24 0)
1 23
1 . 1 5 ( .0 4 5 )
M IN
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
4.0 6 (.16 0)
3.5 5 (.14 0)
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-B-
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
L E A D A S S IG N M E N T S
1 - GATE
2 - DR AIN
3 - SOURCE
4 - DR AIN
3X
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
2 . 5 4 ( .1 0 0 )
3X
0 . 9 3 ( .0 3 7 )
0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 ) M B A M
3X
0.5 5 (.02 2)
0.4 6 (.01 8)
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 -A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
EXAMPL E : THIS IS AN IRF1 010
W ITH ASSEMBLY
LOT CODE 9B1M
I NT E RN A TIO N AL
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
IRF 10 10
9246
9B 1 M
A
PART NUMBER
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice.
8/97
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页数 | 8 页 | ||
下载 | [ IRL3303.PDF 数据手册 ] |
零件编号 | 描述 | 制造商 |
IRL3302 | HEXFET Power MOSFET | International Rectifier |
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IRL3302SPBF | HEXFET Power MOSFET | International Rectifier |
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